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Pregled bibliografske jedinice broj: 582678

Modelling of Electrical Characteristics of Ultrashallow Pure Amorphous Boron p<sup>+</sup>n Junctions

Knežević, Tihomir; Suligoj, Tomislav; Šakić, Agata; Nanver, Lis K.
Modelling of Electrical Characteristics of Ultrashallow Pure Amorphous Boron p+n Junctions // MIPRO 2012 - 35th International Convention on Information and Communication Technology, Electronics and Microelectronics - Proceedings / Biljanović, Petar (ur.).
Rijeka: Hrvatska udruga za informacijsku i komunikacijsku tehnologiju, elektroniku i mikroelektroniku - MIPRO, 2012. str. 42-47 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni)

CROSBI ID: 582678 Za ispravke kontaktirajte CROSBI podršku putem web obrasca

Naslov
Modelling of Electrical Characteristics of Ultrashallow Pure Amorphous Boron p<sup>+</sup>n Junctions

Autori
Knežević, Tihomir ; Suligoj, Tomislav ; Šakić, Agata ; Nanver, Lis K.

Vrsta, podvrsta i kategorija rada
Radovi u zbornicima skupova, cjeloviti rad (in extenso), znanstveni

Izvornik
MIPRO 2012 - 35th International Convention on Information and Communication Technology, Electronics and Microelectronics - Proceedings / Biljanović, Petar - Rijeka : Hrvatska udruga za informacijsku i komunikacijsku tehnologiju, elektroniku i mikroelektroniku - MIPRO, 2012, 42-47

ISBN
978-953-233-069-4

Skup
35th International Convention MIPRO 2011

Mjesto i datum
Rijeka, Hrvatska, 21.05.2011. - 25.05.2011

Vrsta sudjelovanja
Predavanje

Vrsta recenzije
Međunarodna recenzija

Ključne riječi
pure boron deposition; ultrashallow p+n junctions; emitter Gummel number; amorphous boron; heterostructure; bandgap; trap states; time-of-flight

Sažetak
Diodes fabricated by a pure amorphous boron (PureB) deposition technology show outstanding performance. Depositing a PureB-layer on Si at temperatures from 500 - 700ºC creates an effective p<sup>+</sup>-layer at the interface and ultrashallow p<sup>+</sup>n-junctions less than 10 nm deep can be made. The PureB layer can also be used as an emitter region in pnp bipolar transistors having a high effective emitter Gummel number (G<sub>E</sub>) that appears to be related to the properties of the amorphous boron layer. In this paper, we suggest a wide-bandgap model of the amorphous boron layer to explain how its properties can lead to a suppression of the electron injection from the base into the emitter region thus giving the high G<sub>E</sub>. The presence of trap states in the bandgap of amorphous boron layer is also considered. They could reduce the majority carrier concentration and change the mobility in the layer contributing to a decrease of G<sub>E</sub>. It is concluded that the wider bandgap together with the trap states in the bandgap of amorphous boron layer could account for the high emitter Gummel number.

Izvorni jezik
Engleski

Znanstvena područja
Elektrotehnika



POVEZANOST RADA

Projekti:
036-0361566-1567 - Nanometarski elektronički elementi i sklopovske primjene (Suligoj, Tomislav, MZO ) ( CroRIS)

Ustanove:
Fakultet elektrotehnike i računarstva, Zagreb

Profili:

Avatar Url Tihomir Knežević (autor)

Avatar Url Tomislav Suligoj (autor)

Citiraj ovu publikaciju:

Knežević, Tihomir; Suligoj, Tomislav; Šakić, Agata; Nanver, Lis K.
Modelling of Electrical Characteristics of Ultrashallow Pure Amorphous Boron p+n Junctions // MIPRO 2012 - 35th International Convention on Information and Communication Technology, Electronics and Microelectronics - Proceedings / Biljanović, Petar (ur.).
Rijeka: Hrvatska udruga za informacijsku i komunikacijsku tehnologiju, elektroniku i mikroelektroniku - MIPRO, 2012. str. 42-47 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni)
Knežević, T., Suligoj, T., Šakić, A. & Nanver, L. (2012) Modelling of Electrical Characteristics of Ultrashallow Pure Amorphous Boron p+n Junctions. U: Biljanović, P. (ur.)MIPRO 2012 - 35th International Convention on Information and Communication Technology, Electronics and Microelectronics - Proceedings.
@article{article, author = {Kne\v{z}evi\'{c}, Tihomir and Suligoj, Tomislav and \v{S}aki\'{c}, Agata and Nanver, Lis K.}, editor = {Biljanovi\'{c}, P.}, year = {2012}, pages = {42-47}, keywords = {pure boron deposition, ultrashallow p+n junctions, emitter Gummel number, amorphous boron, heterostructure, bandgap, trap states, time-of-flight}, isbn = {978-953-233-069-4}, title = {Modelling of Electrical Characteristics of Ultrashallow Pure Amorphous Boron p+n Junctions}, keyword = {pure boron deposition, ultrashallow p+n junctions, emitter Gummel number, amorphous boron, heterostructure, bandgap, trap states, time-of-flight}, publisher = {Hrvatska udruga za informacijsku i komunikacijsku tehnologiju, elektroniku i mikroelektroniku - MIPRO}, publisherplace = {Rijeka, Hrvatska} }
@article{article, author = {Kne\v{z}evi\'{c}, Tihomir and Suligoj, Tomislav and \v{S}aki\'{c}, Agata and Nanver, Lis K.}, editor = {Biljanovi\'{c}, P.}, year = {2012}, pages = {42-47}, keywords = {pure boron deposition, ultrashallow p+n junctions, emitter Gummel number, amorphous boron, heterostructure, bandgap, trap states, time-of-flight}, isbn = {978-953-233-069-4}, title = {Modelling of Electrical Characteristics of Ultrashallow Pure Amorphous Boron p+n Junctions}, keyword = {pure boron deposition, ultrashallow p+n junctions, emitter Gummel number, amorphous boron, heterostructure, bandgap, trap states, time-of-flight}, publisher = {Hrvatska udruga za informacijsku i komunikacijsku tehnologiju, elektroniku i mikroelektroniku - MIPRO}, publisherplace = {Rijeka, Hrvatska} }

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