Naslov
Important Properties of Transient Thermal Impedance for MOS-Gated Power Semiconductors

Autori
Jakopović, Željko ; Benčić, Zvonko ; Kolonić, Fetah

Vrsta, podvrsta i kategorija rada
Radovi u zbornicima skupova, cjeloviti rad (in extenso), znanstveni

Izvornik
Proceedings of the IEEE International Symposium on Industrial Electronics ISIE'99 / Jezernik K. - Maribor : Institute of Electrical and Electronics Engineers (IEEE), 1999, 574-578

Skup
IEEE International Symposium on Industrial Electronics ISIE'99

Mjesto i datum
Bled, Slovenija, 12.07.1999. - 16.07.1999

Vrsta sudjelovanja
Predavanje

Vrsta recenzije
Međunarodna recenzija

Ključne riječi
transient thermal impedance; TEMPFET; temperature sensitive electrical parameter

Sažetak
Important properties of transient thermal impedance (TTI) for MOS-gated power semiconductors are investigated on the base of measurement results. Electrical method of transient thermal impedance measurement was used with different temperature sensitive electrical parameters (TSEPs). A wide variety of measurements on MOSFET and IGBT samples was performed, to be able to answer on the questions about TTI existance conditions. Different types of temperature responses were used , as well as different power dissipation levels and conditions. Final TEMPFET test, with simulation and measurement of overtemperature protection reaction time, shows that TTI of MOS-gated components, if properly measured, can be successfully used for simulative estimation of semiconductor's operating temperature.

Izvorni jezik
Engleski

Znanstvena područja
Elektrotehnika

POVEZANOST RADA