Naslov
A Temperature-dependent Power MOSFET Model

Autori
Šunde, Viktor ; Benčić, Zvonko ; Jakopović, Željko

Vrsta, podvrsta i kategorija rada
Radovi u zbornicima skupova, cjeloviti rad (in extenso), znanstveni

Izvornik
Proceedings of MIPRO'99/ 8th MEET / Biljanović P., Skala K., Ribarić S., Budin L., Golubić S. - Rijeka : Hrvatska udruga za informacijsku i komunikacijsku tehnologiju, elektroniku i mikroelektroniku - MIPRO, 1999, 42-45

Skup
MIPRO'99 22nd International Convention

Mjesto i datum
Opatija, Hrvatska, 17.05.1999. - 21.05.1999

Vrsta sudjelovanja
Predavanje

Vrsta recenzije
Međunarodna recenzija

Ključne riječi
temperature dependent model; power MOSFET; virtual junction temperature

Sažetak
A model of power MOSFET with temperature dependent parameters was developed. Chanell charge carrier mobility, drift area resistance and threshold voltage were the temperature dependent parameters selected. This temperature dependent MOSFET model is based on catalogue data. Accordingly, the model was tested first by simulating catalogue characteristics. By using a developed model, a designer of electronic circuits, especially electronic power converters, can obtain very precise information about the dependence of a MOSFET's voltage-current stresses on virtual temperature. Moreover, coupled with a thermal model of MOSFET, this temperature dependent model can be simultaneously used to calculate the time course of voltage, current, power loss and virtual junction temperature.

Izvorni jezik
Engleski

Znanstvena područja
Elektrotehnika

POVEZANOST RADA