Pregled bibliografske jedinice broj: 577042
P-Doping Mechanisms in Catalyst-Free Gallium Arsenide Nanowires
P-Doping Mechanisms in Catalyst-Free Gallium Arsenide Nanowires // Nano letters, 10 (2010), 5; 1734-1740 doi:10.1021/nl100157w (međunarodna recenzija, članak, znanstveni)
CROSBI ID: 577042 Za ispravke kontaktirajte CROSBI podršku putem web obrasca
Naslov
P-Doping Mechanisms in Catalyst-Free Gallium Arsenide Nanowires
Autori
Dufouleur, Joseph ; Colombo, Carlo ; Garma, Tonko ; Ketterer, Bernt ; Uccelli, Emanuele ; Nicotra, Marco, Fontcuberta i Morral, Anna
Izvornik
Nano letters (1530-6984) 10
(2010), 5;
1734-1740
Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni
Ključne riječi
nanowire; doping mechanisms; catalyst-free; Raman spectroscopy; electronic transport
Sažetak
Doped catalyst-free GaAs nanowires have been grown by molecular beam epitaxy with the gallium-assisted method. The spatial dependence of the dopant oncentration and resistivity have been measured by Raman spectroscopy and four point electrical measurements. Along with theoretical considerations, the doping mechanisms have been revealed. Two competing mechanisms have been revealed: dopant incorporation from the side facets and from the gallium droplet. In the latter incorporation path, doping compensation seems to play an important role in the effective dopant concentration. Hole concentrations of at least 2.4 × 10^18 cm^-3 have been achieved, which to our knowledge is the largest p doping range obtained up to date. This work opens the avenue for the use of doped GaAs nanowires in advanced applications and in mesoscopic physics experiments.
Izvorni jezik
Engleski
Znanstvena područja
Fizika, Elektrotehnika
Citiraj ovu publikaciju:
Časopis indeksira:
- Current Contents Connect (CCC)
- Web of Science Core Collection (WoSCC)
- Science Citation Index Expanded (SCI-EXP)
- SCI-EXP, SSCI i/ili A&HCI
- Scopus
- MEDLINE
