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Pregled bibliografske jedinice broj: 572249

Assessment of electron mobility in ultra-thin body InGaAs-on-insulator MOSFETs using physics-based modeling

Poljak, Mirko; Jovanović, Vladimir; Grgec, Dalibor; Suligoj, Tomislav
Assessment of electron mobility in ultra-thin body InGaAs-on-insulator MOSFETs using physics-based modeling // IEEE transactions on electron devices, 59 (2012), 6; 1636-1643 doi:10.1109/TED.2012.2189217 (međunarodna recenzija, članak, znanstveni)

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Naslov
Assessment of electron mobility in ultra-thin body InGaAs-on-insulator MOSFETs using physics-based modeling

Autori
Poljak, Mirko ; Jovanović, Vladimir ; Grgec, Dalibor ; Suligoj, Tomislav

Izvornik
IEEE transactions on electron devices (0018-9383) 59 (2012), 6; 1636-1643

Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni

Ključne riječi
indium-gallium-arsenide; low-field mobility; physics-based modeling; quantum confinement; ultra-thin body

Sažetak
We have investigated the electron mobility in ultra-thin-body InGaAs-on-insulator devices using physics-based modeling that self-consistently accounts for quantum confinement and covers band structure effects in ultra-thin III-V layers. Scattering by non-polar and polar acoustic and optical phonons, surface roughness and thickness fluctuations, Coulomb and alloy disorder have been included in the calculations. The modeling, calibrated and verified on experimental data from the literature, has revealed a strong influence of thickness fluctuations caused by the light effective mass of Γ valley electrons. Our results indicate that InGaAs-on-insulator MOSFETs are more influenced by interface properties compared to SOI devices and outperform them only above certain body thickness that depends on interface quality.

Izvorni jezik
Engleski

Znanstvena područja
Elektrotehnika



POVEZANOST RADA

Projekti:
036-0361566-1567 - Nanometarski elektronički elementi i sklopovske primjene (Suligoj, Tomislav, MZO ) ( CroRIS)

Ustanove:
Fakultet elektrotehnike i računarstva, Zagreb

Profili:

Avatar Url Dalibor Grgec (autor)

Avatar Url Vladimir Jovanović (autor)

Avatar Url Tomislav Suligoj (autor)

Avatar Url Mirko Poljak (autor)

Poveznice na cjeloviti tekst rada:

doi dx.doi.org ieeexplore.ieee.org

Citiraj ovu publikaciju:

Poljak, Mirko; Jovanović, Vladimir; Grgec, Dalibor; Suligoj, Tomislav
Assessment of electron mobility in ultra-thin body InGaAs-on-insulator MOSFETs using physics-based modeling // IEEE transactions on electron devices, 59 (2012), 6; 1636-1643 doi:10.1109/TED.2012.2189217 (međunarodna recenzija, članak, znanstveni)
Poljak, M., Jovanović, V., Grgec, D. & Suligoj, T. (2012) Assessment of electron mobility in ultra-thin body InGaAs-on-insulator MOSFETs using physics-based modeling. IEEE transactions on electron devices, 59 (6), 1636-1643 doi:10.1109/TED.2012.2189217.
@article{article, author = {Poljak, Mirko and Jovanovi\'{c}, Vladimir and Grgec, Dalibor and Suligoj, Tomislav}, year = {2012}, pages = {1636-1643}, DOI = {10.1109/TED.2012.2189217}, keywords = {indium-gallium-arsenide, low-field mobility, physics-based modeling, quantum confinement, ultra-thin body}, journal = {IEEE transactions on electron devices}, doi = {10.1109/TED.2012.2189217}, volume = {59}, number = {6}, issn = {0018-9383}, title = {Assessment of electron mobility in ultra-thin body InGaAs-on-insulator MOSFETs using physics-based modeling}, keyword = {indium-gallium-arsenide, low-field mobility, physics-based modeling, quantum confinement, ultra-thin body} }
@article{article, author = {Poljak, Mirko and Jovanovi\'{c}, Vladimir and Grgec, Dalibor and Suligoj, Tomislav}, year = {2012}, pages = {1636-1643}, DOI = {10.1109/TED.2012.2189217}, keywords = {indium-gallium-arsenide, low-field mobility, physics-based modeling, quantum confinement, ultra-thin body}, journal = {IEEE transactions on electron devices}, doi = {10.1109/TED.2012.2189217}, volume = {59}, number = {6}, issn = {0018-9383}, title = {Assessment of electron mobility in ultra-thin body InGaAs-on-insulator MOSFETs using physics-based modeling}, keyword = {indium-gallium-arsenide, low-field mobility, physics-based modeling, quantum confinement, ultra-thin body} }

Časopis indeksira:


  • Current Contents Connect (CCC)
  • Web of Science Core Collection (WoSCC)
    • Science Citation Index Expanded (SCI-EXP)
    • SCI-EXP, SSCI i/ili A&HCI
  • Scopus

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