Pregled bibliografske jedinice broj: 563796
Potential profile of the quantum step in semiconductors and the example of GaN
Potential profile of the quantum step in semiconductors and the example of GaN // Semiconductor science and technology, 27 (2012), 8; 085014 -1 doi:10.1088/0268-1242/27/8/085014 (međunarodna recenzija, članak, znanstveni)
CROSBI ID: 563796 Za ispravke kontaktirajte CROSBI podršku putem web obrasca
Naslov
Potential profile of the quantum step in semiconductors and the example of GaN
Autori
Šantić, Branko ; Šantić, Neven
Izvornik
Semiconductor science and technology (0268-1242) 27
(2012), 8;
085014 -1
Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni
Ključne riječi
quantum wells; quantum dots; GaN; semiconductors
Sažetak
It is usually assumed that the quantum step (QS), quantum well (QW) and quantum barrier (QB) have the rectangular potential profiles. We show that the potential profiles are not really rectangular. A quantum step is actually a smooth, gradual change of potential over a distance larger than one monolayer. For a narrow QW, instead of the quantum well, a more appropriate term is the quantum valley. We study the dipole layers formed by the ions and calculate the electrostatic contribution to the potential. Notably, the minimal thickness of the QS is not determined by the distance between the charged planes, but by the lateral spacing between ions of the same polarity. In the example of GaN, the QS cannot be thinner than about 3 Å.
Izvorni jezik
Engleski
Znanstvena područja
Fizika
POVEZANOST RADA
Projekti:
098-0982886-2897 - Poluvodički materijali za optoelektroniku i nanotehnologiju (Šantić, Branko, MZOS ) ( CroRIS)
Ustanove:
Institut "Ruđer Bošković", Zagreb
Citiraj ovu publikaciju:
Časopis indeksira:
- Current Contents Connect (CCC)
- Web of Science Core Collection (WoSCC)
- Science Citation Index Expanded (SCI-EXP)
- SCI-EXP, SSCI i/ili A&HCI
- Scopus
