Naslov
ELECTRICAL PROPERTIES OF FABRICATED TRANSISTOR REGIONS IN ADVANCED SILICON BIPOLAR TECHNOLOGIES

Autori
Khan, Saeed Ahmed

Vrsta, podvrsta i kategorija rada
Ocjenski radovi, diplomski rad, diplomski

Fakultet
Fakultet elektrotehnike i računarstva

Mjesto
Zagreb

Datum
01.07

Godina
2011

Stranica
77

Mentor
Suligoj, Tomislav

Neposredni voditelj
Koričić, Marko

Ključne riječi
HCBT; advanced silicon bipolar technology; sheet resistance; wafer mapping; HCBT process integration

Sažetak
Nowadays, everything is faster and more pronounced development of new technologies in all industries including the electronics and semiconductor technology. The market requires all faster and cheaper and more cost-effective structures that will have little consumer power. This development followed by bipolar technology, despite the fact that in many increasingly using CMOS technology, and still has its scope. CMOS technology has gained popularity because of low power consumption and small size as allows high packing density and thus, the market and most importantly, reduces production costs. Scaling has not only resulted in higher transistor count per chip, but in improved electrical characteristics which broadened the area of applicability of CMOS technology. The disadvantages and limitations in the further development and reducing the dimensions of classic bipolar structure, as well as problems and high costs for integration in the same CMOS process led to the emergence of new bipolar transistor structure with horizontal current bipolar transistor (HCBT). Progress in new technology in future, we will have a market which led to a need for development test structures and circuits for new bipolar transistor. HCBT has good characteristics of bipolar transistors with vertical current flow output as the optimal doping profiles, but also has good characteristics of lateral transistors as well as ease of production and small parasitic elements. With such characteristics it is expected that integration of the CMOS process provides low-cost high-performance technology. HCBT structure of the first idea until now has been changed and improved. Depending on the use of developed several different structures, which differ in complexity of production and therefore price, and the resulting dimensions and hence electrical characteristics and speed. HCBT comprises the good characteristics of vertical devices such as optimal intrinsic transistor doping profile and good characteristics of lateral devices such as low volume of parasitic elements of the transistor and reduced process complexity.

Izvorni jezik
Engleski

Znanstvena područja
Elektrotehnika

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