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Pregled bibliografske jedinice broj: 550227

Versatile silicon photodiode detector technology for scanning electron microscopy with high-efficiency sub-5 keV electron detection

Šakić, Agata; Nanver, Lis K.; Van Veen, Gerard; Kooijman, Kees; Vogelsang, Patrick; Scholtes, T. L. M.; De Boer, W. B.; Wien, W.; Milosavljević, Silvana; Heerkens, C. T. H. et al.
Versatile silicon photodiode detector technology for scanning electron microscopy with high-efficiency sub-5 keV electron detection // Technical Digest - International Electron Devices Meeting
San Francisco (CA): Institute of Electrical and Electronics Engineers (IEEE), 2010. str. 31.4.1-31.4.4 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni)

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Naslov
Versatile silicon photodiode detector technology for scanning electron microscopy with high-efficiency sub-5 keV electron detection

Autori
Šakić, Agata ; Nanver, Lis K. ; Van Veen, Gerard ; Kooijman, Kees ; Vogelsang, Patrick ; Scholtes, T. L. M. ; De Boer, W. B. ; Wien, W. ; Milosavljević, Silvana ; Heerkens, C. T. H. ; Knežević, Tihomir ; Spee, I.

Vrsta, podvrsta i kategorija rada
Radovi u zbornicima skupova, cjeloviti rad (in extenso), znanstveni

Izvornik
Technical Digest - International Electron Devices Meeting / - San Francisco (CA) : Institute of Electrical and Electronics Engineers (IEEE), 2010, 31.4.1-31.4.4

ISBN
978-1-4424-7418-5

Skup
IEEE International Electron Devices Meeting

Mjesto i datum
San Francisco (CA), Sjedinjene Američke Države, 06.12.2010. - 08.12.2010

Vrsta sudjelovanja
Predavanje

Vrsta recenzije
Međunarodna recenzija

Ključne riječi
Electron detection; Electron detectors; High efficiency; High sensitivity; Low energy electrons; Silicon photodiode; Scanning electron microscopy

Sažetak
A new silicon electron detector technology for Scanning Electron Microscopy, based on ultrashallow p+n boron-layer photodiodes, features nm-thin anodes enabling low-energy electron detection with record-high sensitivity down to 200 eV. Designs with segmented, closely-packed photodiodes and through-wafer apertures allow flexible configurations for optimal material and/or topographical contrasts. A high scanning speed is obtained by growing a well-controlled, lightly-doped, tens-of-microns-thick epi-layer for low capacitance, and by patterning a conductive grid directly on the photosensitive surface for low series resistance.

Izvorni jezik
Engleski

Znanstvena područja
Elektrotehnika



POVEZANOST RADA

Projekti:
036-0361566-1567 - Nanometarski elektronički elementi i sklopovske primjene (Suligoj, Tomislav, MZO ) ( CroRIS)

Ustanove:
Fakultet elektrotehnike i računarstva, Zagreb

Profili:

Avatar Url Tihomir Knežević (autor)

Citiraj ovu publikaciju:

Šakić, Agata; Nanver, Lis K.; Van Veen, Gerard; Kooijman, Kees; Vogelsang, Patrick; Scholtes, T. L. M.; De Boer, W. B.; Wien, W.; Milosavljević, Silvana; Heerkens, C. T. H. et al.
Versatile silicon photodiode detector technology for scanning electron microscopy with high-efficiency sub-5 keV electron detection // Technical Digest - International Electron Devices Meeting
San Francisco (CA): Institute of Electrical and Electronics Engineers (IEEE), 2010. str. 31.4.1-31.4.4 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni)
Šakić, A., Nanver, L., Van Veen, G., Kooijman, K., Vogelsang, P., Scholtes, T., De Boer, W., Wien, W., Milosavljević, S. & Heerkens, C. (2010) Versatile silicon photodiode detector technology for scanning electron microscopy with high-efficiency sub-5 keV electron detection. U: Technical Digest - International Electron Devices Meeting.
@article{article, author = {\v{S}aki\'{c}, Agata and Nanver, Lis K. and Van Veen, Gerard and Kooijman, Kees and Vogelsang, Patrick and Scholtes, T. L. M. and De Boer, W. B. and Wien, W. and Milosavljevi\'{c}, Silvana and Heerkens, C. T. H. and Kne\v{z}evi\'{c}, Tihomir and Spee, I.}, year = {2010}, pages = {31.4.1-31.4.4}, keywords = {Electron detection, Electron detectors, High efficiency, High sensitivity, Low energy electrons, Silicon photodiode, Scanning electron microscopy}, isbn = {978-1-4424-7418-5}, title = {Versatile silicon photodiode detector technology for scanning electron microscopy with high-efficiency sub-5 keV electron detection}, keyword = {Electron detection, Electron detectors, High efficiency, High sensitivity, Low energy electrons, Silicon photodiode, Scanning electron microscopy}, publisher = {Institute of Electrical and Electronics Engineers (IEEE)}, publisherplace = {San Francisco (CA), Sjedinjene Ameri\v{c}ke Dr\v{z}ave} }
@article{article, author = {\v{S}aki\'{c}, Agata and Nanver, Lis K. and Van Veen, Gerard and Kooijman, Kees and Vogelsang, Patrick and Scholtes, T. L. M. and De Boer, W. B. and Wien, W. and Milosavljevi\'{c}, Silvana and Heerkens, C. T. H. and Kne\v{z}evi\'{c}, Tihomir and Spee, I.}, year = {2010}, pages = {31.4.1-31.4.4}, keywords = {Electron detection, Electron detectors, High efficiency, High sensitivity, Low energy electrons, Silicon photodiode, Scanning electron microscopy}, isbn = {978-1-4424-7418-5}, title = {Versatile silicon photodiode detector technology for scanning electron microscopy with high-efficiency sub-5 keV electron detection}, keyword = {Electron detection, Electron detectors, High efficiency, High sensitivity, Low energy electrons, Silicon photodiode, Scanning electron microscopy}, publisher = {Institute of Electrical and Electronics Engineers (IEEE)}, publisherplace = {San Francisco (CA), Sjedinjene Ameri\v{c}ke Dr\v{z}ave} }

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