Naslov
Examination of Novel High-voltage Double-emitter Horizontal Current Bipolar Transistor (HCBT)

Autori
Koričić, Marko ; Suligoj, Tomislav ; Mochizuki, Hidenori ; Morita, So-ichi ; Shinomura, Katsumi ; Imai, Hisaya

Vrsta, podvrsta i kategorija rada
Radovi u zbornicima skupova, cjeloviti rad (in extenso), znanstveni

Izvornik
Proceedings of the 2011 Bipolar/BiCMOS Circuits and Technology Meeting / - : Institute of Electrical and Electronics Engineers (IEEE), 2011, 5-8

ISBN
978-1-61284-163-2

Skup
Bipolar/BiCMOS Circuits and Technology Meeting

Mjesto i datum
Atlanta (GA), Sjedinjene Američke Države, 09.10.2011. - 11.10.2011

Vrsta sudjelovanja
Predavanje

Vrsta recenzije
Međunarodna recenzija

Ključne riječi
BiCMOS integrirani sklopovi; elektronički elementi snage; elektrostatska zaštita baze; Tranzistor s horizontalnim tokom struje; fizika elektroničkih elemenata
(BiCMOS integrated circuits; power devices; base shielding effect; Horizontal Current Bipolar Transistor; device physics)

Sažetak
Electrical characteristics of a novel high-voltage double emitter HCBT structure integrated with the standard 180 nm bulk CMOS are presented. 3D collector charge sharing is used to achieve intrinsic base shielding and to limit the electric field across the intrinsic base-collector junction. This is accomplished by the transistor layout i.e. the mask design. Transistors with BVCEO =12.6 V, VA=301 V and fT=12.7 GHz are fabricated in a standard HCBT BiCMOS process flow without the use of the additional lithography masks. Physical behavior of the transistor is thoroughly examined by 3D device simulations

Izvorni jezik
Engleski

Znanstvena područja
Elektrotehnika

POVEZANOST RADA