Pregled bibliografske jedinice broj: 531084
Point defects in gallium nitride: x-ray absorption measurements and multiple scattering simulations
Point defects in gallium nitride: x-ray absorption measurements and multiple scattering simulations // Applied physics letters, 99 (2011), 17; 172107-1 doi:10.1063/1.3656701 (međunarodna recenzija, članak, znanstveni)
CROSBI ID: 531084 Za ispravke kontaktirajte CROSBI podršku putem web obrasca
Naslov
Point defects in gallium nitride: x-ray absorption measurements and multiple scattering simulations
Autori
Peter, Robert ; Šegota, Doris ; Petravić, Mladen
Izvornik
Applied physics letters (0003-6951) 99
(2011), 17;
172107-1
Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni
Ključne riječi
NEXAFS; FEFF; point defects; GaN
Sažetak
We have studied formation of nitrogen-related point defects in gallium nitride (GaN) using near-edge x-ray absorption fine- structure (NEXAFS) spectroscopy and ab initio FEFF calculations. The presence of several point defects, created within the GaN matrix by low-energy ion-bombardment, has been detected by NEXAFS measurements around N K-edge. FEFF simulations that take into account formation of nitrogen antisites, interstitials and vacancies around absorbing nitrogen atoms are consistent with NEXAFS results. The position of energy levels created by these defects within the energy gap of GaN, obtained by both NEXAFS measurements and FEFF simulations, are in good agreement with theoretical predictions.
Izvorni jezik
Engleski
Znanstvena područja
Fizika
POVEZANOST RADA
Projekti:
316-0982886-0542 - Istraživanje dušikovih defekata u složenim poluvodičkim spojevima (Petravić, Mladen, MZOS ) ( CroRIS)
Ustanove:
Sveučilište u Rijeci - Odjel za fiziku
Citiraj ovu publikaciju:
Časopis indeksira:
- Current Contents Connect (CCC)
- Web of Science Core Collection (WoSCC)
- Science Citation Index Expanded (SCI-EXP)
- SCI-EXP, SSCI i/ili A&HCI
- Scopus
