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Pregled bibliografske jedinice broj: 529951

Investigation of Hole Mobility in Ultrathin-Body SOI MOSFETs on (110) Surface: Effects of Silicon Thickness and Body Doping

Poljak, Mirko; Jovanović, Vladimir; Suligoj, Tomislav
Investigation of Hole Mobility in Ultrathin-Body SOI MOSFETs on (110) Surface: Effects of Silicon Thickness and Body Doping // Proceedings of the 2011 IEEE International SOI Conference / W. Xiong (ur.).
Tempe (AZ): Institute of Electrical and Electronics Engineers (IEEE), 2011. str. 114-115 (poster, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni)

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Naslov
Investigation of Hole Mobility in Ultrathin-Body SOI MOSFETs on (110) Surface: Effects of Silicon Thickness and Body Doping

Autori
Poljak, Mirko ; Jovanović, Vladimir ; Suligoj, Tomislav

Vrsta, podvrsta i kategorija rada
Radovi u zbornicima skupova, cjeloviti rad (in extenso), znanstveni

Izvornik
Proceedings of the 2011 IEEE International SOI Conference / W. Xiong - Tempe (AZ) : Institute of Electrical and Electronics Engineers (IEEE), 2011, 114-115

ISBN
978-1-61284-759-7

Skup
2011 IEEE International SOI Conference

Mjesto i datum
Tempe (AZ), Sjedinjene Američke Države, 03.10.2011. - 06.10.2011

Vrsta sudjelovanja
Poster

Vrsta recenzije
Međunarodna recenzija

Ključne riječi
physics-based modeling; hole mobility; quantum confinement; effective mass; bandstructure effects; ultra-thin body; FinFET

Sažetak
Our modeling reproduces experimental data for TSi of 2.3–32 nm, including the µh enhancement effect in low-doped devices for TSi of 3.6 nm. For the first time, anomalous µh behavior in highly-doped UTB devices (NB > 1017 cm-3) is revealed. Information presented herein could be valuable for the design of extremely-scaled UTB SOI and FinFET devices.

Izvorni jezik
Engleski

Znanstvena područja
Elektrotehnika



POVEZANOST RADA

Projekti:
036-0361566-1567 - Nanometarski elektronički elementi i sklopovske primjene (Suligoj, Tomislav, MZO ) ( CroRIS)
036-0982904-1642 - Sofisticirane poluvodičke strukture za komunikacijsku tehnologiju (Koričić, Marko, MZO ) ( CroRIS)

Ustanove:
Fakultet elektrotehnike i računarstva, Zagreb

Profili:

Avatar Url Tomislav Suligoj (autor)

Avatar Url Vladimir Jovanović (autor)

Avatar Url Mirko Poljak (autor)

Citiraj ovu publikaciju:

Poljak, Mirko; Jovanović, Vladimir; Suligoj, Tomislav
Investigation of Hole Mobility in Ultrathin-Body SOI MOSFETs on (110) Surface: Effects of Silicon Thickness and Body Doping // Proceedings of the 2011 IEEE International SOI Conference / W. Xiong (ur.).
Tempe (AZ): Institute of Electrical and Electronics Engineers (IEEE), 2011. str. 114-115 (poster, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni)
Poljak, M., Jovanović, V. & Suligoj, T. (2011) Investigation of Hole Mobility in Ultrathin-Body SOI MOSFETs on (110) Surface: Effects of Silicon Thickness and Body Doping. U: W. Xiong (ur.)Proceedings of the 2011 IEEE International SOI Conference.
@article{article, author = {Poljak, Mirko and Jovanovi\'{c}, Vladimir and Suligoj, Tomislav}, year = {2011}, pages = {114-115}, keywords = {physics-based modeling, hole mobility, quantum confinement, effective mass, bandstructure effects, ultra-thin body, FinFET}, isbn = {978-1-61284-759-7}, title = {Investigation of Hole Mobility in Ultrathin-Body SOI MOSFETs on (110) Surface: Effects of Silicon Thickness and Body Doping}, keyword = {physics-based modeling, hole mobility, quantum confinement, effective mass, bandstructure effects, ultra-thin body, FinFET}, publisher = {Institute of Electrical and Electronics Engineers (IEEE)}, publisherplace = {Tempe (AZ), Sjedinjene Ameri\v{c}ke Dr\v{z}ave} }
@article{article, author = {Poljak, Mirko and Jovanovi\'{c}, Vladimir and Suligoj, Tomislav}, year = {2011}, pages = {114-115}, keywords = {physics-based modeling, hole mobility, quantum confinement, effective mass, bandstructure effects, ultra-thin body, FinFET}, isbn = {978-1-61284-759-7}, title = {Investigation of Hole Mobility in Ultrathin-Body SOI MOSFETs on (110) Surface: Effects of Silicon Thickness and Body Doping}, keyword = {physics-based modeling, hole mobility, quantum confinement, effective mass, bandstructure effects, ultra-thin body, FinFET}, publisher = {Institute of Electrical and Electronics Engineers (IEEE)}, publisherplace = {Tempe (AZ), Sjedinjene Ameri\v{c}ke Dr\v{z}ave} }

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