Pregled bibliografske jedinice broj: 526387
Preparation of the Kondo insulators FeSi by magnetron sputtering
Preparation of the Kondo insulators FeSi by magnetron sputtering // Materials Science Forum, Volume 663-665,
Kunming, Kina, 2010. str. 1129-1132 doi:10.4028/www.scientific.net/MSF.663-665.1129 (poster, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni)
CROSBI ID: 526387 Za ispravke kontaktirajte CROSBI podršku putem web obrasca
Naslov
Preparation of the Kondo insulators FeSi by magnetron sputtering
Autori
Zhang, Jin Min ; Xie, Quan ; Borjanović, Vesna ; Liang, Ya ; Zeng, Wu Xian ; Fu, Da Peng ; Ma, Dao Jing ; Wang, Yan
Vrsta, podvrsta i kategorija rada
Radovi u zbornicima skupova, cjeloviti rad (in extenso), znanstveni
Izvornik
Materials Science Forum, Volume 663-665,
/ - , 2010, 1129-1132
ISBN
978-087849211-4
Skup
International Conference on Optical, Electronic and Electrical Materials, OEEM2010
Mjesto i datum
Kunming, Kina, 01.08.2010. - 04.08.2010
Vrsta sudjelovanja
Poster
Vrsta recenzije
Međunarodna recenzija
Ključne riječi
The Kondo insulator ; Magnetron Sputtering ; Sputtering Parameter ; Crystalline
Sažetak
The Kondo insulator FeSi was prepared by DC magnetron sputtering and the effects of sputtering parameters on the formation of FeSi were investigated in detail. The formation of monosilicide FeSi was clarified using X-ray diffraction (XRD) and its microstructure was characterized by scanning electron microscopy (SEM). The results indicate that the sputtering gas pressure, the sputtering power and the Ar flux all have significantly effects on formation of FeSi and the crystalline of the film. The sputtering gas pressure has effects on sputtering yields, depositing rate and the energy of sputtering atoms, the sputtering power has effects on the kinetic energy and the diffusion ability of deposing atoms and the gas flux has the effects on the flowing state of Ar gas. The most optimal sputtering parameters for the preparation of the Kondo insulator FeSi by DC magnetron sputtering are given: 1.5 Pa for sputtering Ar pressure, 100 W for sputtering power and 20 SCCM for sputtering Ar flux.
Izvorni jezik
Engleski
Znanstvena područja
Fizika
POVEZANOST RADA
Projekti:
098-1191005-2876 - Procesi interakcije ionskih snopova i nanostrukture (Jakšić, Milko, MZOS ) ( CroRIS)
Ustanove:
Fakultet elektrotehnike i računarstva, Zagreb,
Institut "Ruđer Bošković", Zagreb
Profili:
Vesna Borjanović
(autor)
Citiraj ovu publikaciju:
Časopis indeksira:
- Scopus