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Pregled bibliografske jedinice broj: 525662

High-Voltage PMOS Transistor Model for Prediction of Susceptibility to Conducted Interference

Jović, Ognjen; Maier, C.; Barić, Adrijan
High-Voltage PMOS Transistor Model for Prediction of Susceptibility to Conducted Interference // IEEE transactions on electromagnetic compatibility, 53 (2011), 1; 53-62 doi:10.1109/TEMC.2010.2076817 (međunarodna recenzija, članak, znanstveni)

CROSBI ID: 525662 Za ispravke kontaktirajte CROSBI podršku putem web obrasca

Naslov
High-Voltage PMOS Transistor Model for Prediction of Susceptibility to Conducted Interference

Autori
Jović, Ognjen ; Maier, C. ; Barić, Adrijan

Izvornik
IEEE transactions on electromagnetic compatibility (0018-9375) 53 (2011), 1; 53-62

Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni

Ključne riječi
MOSFET ; electromagnetic compatibility ; radiofrequency interference ; semiconductor device models ; direct power injection (DPI) ; electromagnetic (EM) interference ; high-voltage p-channel metal–oxide-semiconductor (HV-PMOS) model

Sažetak
This paper presents a circuit-based high-voltage p-channel metal-oxide-semiconductor (HV-PMOS) transistor model that includes a vertical parasitic p-n-p bipolar transistor and a procedure for extraction of its model parameters. HV-PMOS transistors are subjected to conducted radio frequency (RF) interference at the source pin by using the direct power-injection method. The results reveal complex behavior when the power level of RF interference is varied. This behavior is caused by both nonlinear characteristics of the intrinsic MOS transistor and turn-on of the parasitic p-n-p bipolar transistor at higher RF power levels. The impact of strong conducted RF interference up to 20 dBm is modeled accurately in the frequency range from 1 MHz up to 1 GHz.

Izvorni jezik
Engleski

Znanstvena područja
Elektrotehnika



POVEZANOST RADA

Projekti:
MZO-ZP-036-0361621-1622 - Kvaliteta signala u integriranim sklopovima s mješovitim signalom (Barić, Adrijan, MZO ) ( CroRIS)

Ustanove:
Fakultet elektrotehnike i računarstva, Zagreb

Profili:

Avatar Url Adrijan Barić (autor)

Poveznice na cjeloviti tekst rada:

doi ieeexplore.ieee.org

Citiraj ovu publikaciju:

Jović, Ognjen; Maier, C.; Barić, Adrijan
High-Voltage PMOS Transistor Model for Prediction of Susceptibility to Conducted Interference // IEEE transactions on electromagnetic compatibility, 53 (2011), 1; 53-62 doi:10.1109/TEMC.2010.2076817 (međunarodna recenzija, članak, znanstveni)
Jović, O., Maier, C. & Barić, A. (2011) High-Voltage PMOS Transistor Model for Prediction of Susceptibility to Conducted Interference. IEEE transactions on electromagnetic compatibility, 53 (1), 53-62 doi:10.1109/TEMC.2010.2076817.
@article{article, author = {Jovi\'{c}, Ognjen and Maier, C. and Bari\'{c}, Adrijan}, year = {2011}, pages = {53-62}, DOI = {10.1109/TEMC.2010.2076817}, keywords = {MOSFET, electromagnetic compatibility, radiofrequency interference, semiconductor device models, direct power injection (DPI), electromagnetic (EM) interference, high-voltage p-channel metal–oxide-semiconductor (HV-PMOS) model}, journal = {IEEE transactions on electromagnetic compatibility}, doi = {10.1109/TEMC.2010.2076817}, volume = {53}, number = {1}, issn = {0018-9375}, title = {High-Voltage PMOS Transistor Model for Prediction of Susceptibility to Conducted Interference}, keyword = {MOSFET, electromagnetic compatibility, radiofrequency interference, semiconductor device models, direct power injection (DPI), electromagnetic (EM) interference, high-voltage p-channel metal–oxide-semiconductor (HV-PMOS) model} }
@article{article, author = {Jovi\'{c}, Ognjen and Maier, C. and Bari\'{c}, Adrijan}, year = {2011}, pages = {53-62}, DOI = {10.1109/TEMC.2010.2076817}, keywords = {MOSFET, electromagnetic compatibility, radiofrequency interference, semiconductor device models, direct power injection (DPI), electromagnetic (EM) interference, high-voltage p-channel metal–oxide-semiconductor (HV-PMOS) model}, journal = {IEEE transactions on electromagnetic compatibility}, doi = {10.1109/TEMC.2010.2076817}, volume = {53}, number = {1}, issn = {0018-9375}, title = {High-Voltage PMOS Transistor Model for Prediction of Susceptibility to Conducted Interference}, keyword = {MOSFET, electromagnetic compatibility, radiofrequency interference, semiconductor device models, direct power injection (DPI), electromagnetic (EM) interference, high-voltage p-channel metal–oxide-semiconductor (HV-PMOS) model} }

Časopis indeksira:


  • Current Contents Connect (CCC)
  • Web of Science Core Collection (WoSCC)
    • Science Citation Index Expanded (SCI-EXP)
    • SCI-EXP, SSCI i/ili A&HCI
  • Scopus

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