Naslov
Low-Complexity Full-Melt Laser-Anneal Process for Fabrication of Low-Leakage Implanted Ultrashallow Junctions

Autori
Biasotto, Cleber ; Gonda, Viktor ; Nanver, Lis K. ; Scholtes, Tom L.M. ; van der Cingel, Johan ; Vidal, Daniel ; Jovanović, Vladimir

Izvornik
Journal of electronic materials (0361-5235) 40 (2011), 11; 2187-2196

Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni

Ključne riječi
excimer laser annealing; ultrashallow junctions; tilted implantations; low-temperature processing; reflective masking layer

Sažetak
Good-quality ultrashallow n+p junctions are formed using 5-keV amorphizing As+ implantations followed by single-shot excimer laser anneal for dopant activation. By using an implant that is self- aligned to the contact windows etched in an oxide isolation layer, straightforward processing of the diodes is achieved with postimplantation processing temperatures kept below 400C. A possible source of junction leakage at the perimeter caused by dip-etch enlargement of the contact window, also confirmed by transmission electron microscopy (TEM) analysis, is identified, and diode performance is improved by increasing the junction/contact window overlap. The optimum performance in terms of low leakage, shallow junctions, and low resistivity is achieved for 30 tilted implants and by applying a thin laser- reflective aluminum layer. This work isolates the minimum requirements for achieving low-leakage diode characteristics.

Izvorni jezik
Engleski

Znanstvena područja
Elektrotehnika

POVEZANOST RADA