Pretraga

Pretražite po imenu i prezimenu autora, mentora, urednika, prevoditelja

Napredna pretraga

Pregled bibliografske jedinice broj: 521922

Defects in silicon introduced by helium implantation and subsequent annealing

Capan, Ivana; Bak-Misiuk, Jadwiga; Pivac, Branko; Dubček, Pavo; Misiuk, Andrzej; Bernstorff, Sigrid; Romanowski, P.
Defects in silicon introduced by helium implantation and subsequent annealing // Radiation physics and chemistry, 80 (2011), 10; 1099-1103 doi:10.1016/j.radphyschem.2011.02.006 (međunarodna recenzija, članak, znanstveni)

CROSBI ID: 521922 Za ispravke kontaktirajte CROSBI podršku putem web obrasca

Naslov
Defects in silicon introduced by helium implantation and subsequent annealing

Autori
Capan, Ivana ; Bak-Misiuk, Jadwiga ; Pivac, Branko ; Dubček, Pavo ; Misiuk, Andrzej ; Bernstorff, Sigrid ; Romanowski, P.

Izvornik
Radiation physics and chemistry (0969-806X) 80 (2011), 10; 1099-1103

Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni

Ključne riječi
silicon ; implantation ; defect structure ; GISAXS ; annealing ; hydrostatic pressure

Sažetak
Formation and morphology of defects, including bubbles and voids, induced in silicon by He+ implantation and subsequent high temperature and pressure treatment have been studied by means of X-ray diffraction method and grazing incidence small angle X-ray scattering (GISAXS). Enhanced pressure affects the formation of voids and/or of large cavities inducing creation of faceted structures. Moreover, high pressure treatment suppresses creation of interstitial-related defects.

Izvorni jezik
Engleski

Znanstvena područja
Fizika

Napomena
Rad je prezentiran na skupu The 10th International School and Symposium on Synchrotron Radiation in Natural Science (ISSRNS) : Synchrotron radiation studies in Poland ; Maciej Kozak, Wojciech Paszkowicz, Pawel Piszora (ur.).



POVEZANOST RADA

Projekti:
098-0982886-2866 - Temeljna svojstva nanostruktura i defekata u poluvodičima i dielektricima (Pivac, Branko, MZOS ) ( CroRIS)

Ustanove:
Institut "Ruđer Bošković", Zagreb

Profili:

Avatar Url Branko Pivac (autor)

Avatar Url Ivana Capan (autor)

Avatar Url Pavo Dubček (autor)

Poveznice na cjeloviti tekst rada:

doi dx.doi.org www.sciencedirect.com

Citiraj ovu publikaciju:

Capan, Ivana; Bak-Misiuk, Jadwiga; Pivac, Branko; Dubček, Pavo; Misiuk, Andrzej; Bernstorff, Sigrid; Romanowski, P.
Defects in silicon introduced by helium implantation and subsequent annealing // Radiation physics and chemistry, 80 (2011), 10; 1099-1103 doi:10.1016/j.radphyschem.2011.02.006 (međunarodna recenzija, članak, znanstveni)
Capan, I., Bak-Misiuk, J., Pivac, B., Dubček, P., Misiuk, A., Bernstorff, S. & Romanowski, P. (2011) Defects in silicon introduced by helium implantation and subsequent annealing. Radiation physics and chemistry, 80 (10), 1099-1103 doi:10.1016/j.radphyschem.2011.02.006.
@article{article, author = {Capan, Ivana and Bak-Misiuk, Jadwiga and Pivac, Branko and Dub\v{c}ek, Pavo and Misiuk, Andrzej and Bernstorff, Sigrid and Romanowski, P.}, year = {2011}, pages = {1099-1103}, DOI = {10.1016/j.radphyschem.2011.02.006}, keywords = {silicon, implantation, defect structure, GISAXS, annealing, hydrostatic pressure}, journal = {Radiation physics and chemistry}, doi = {10.1016/j.radphyschem.2011.02.006}, volume = {80}, number = {10}, issn = {0969-806X}, title = {Defects in silicon introduced by helium implantation and subsequent annealing}, keyword = {silicon, implantation, defect structure, GISAXS, annealing, hydrostatic pressure} }
@article{article, author = {Capan, Ivana and Bak-Misiuk, Jadwiga and Pivac, Branko and Dub\v{c}ek, Pavo and Misiuk, Andrzej and Bernstorff, Sigrid and Romanowski, P.}, year = {2011}, pages = {1099-1103}, DOI = {10.1016/j.radphyschem.2011.02.006}, keywords = {silicon, implantation, defect structure, GISAXS, annealing, hydrostatic pressure}, journal = {Radiation physics and chemistry}, doi = {10.1016/j.radphyschem.2011.02.006}, volume = {80}, number = {10}, issn = {0969-806X}, title = {Defects in silicon introduced by helium implantation and subsequent annealing}, keyword = {silicon, implantation, defect structure, GISAXS, annealing, hydrostatic pressure} }

Časopis indeksira:


  • Current Contents Connect (CCC)
  • Web of Science Core Collection (WoSCC)
    • Science Citation Index Expanded (SCI-EXP)
    • SCI-EXP, SSCI i/ili A&HCI
  • Scopus

Citati:

    Altmetrijski pokazatelji:


    Podijeli:





    Contrast
    Increase Font
    Decrease Font
    Dyslexic Font
    CROSBI koristi kolačiće (cookies) kako bi poboljšao funkcionalnost stranice.