Pregled bibliografske jedinice broj: 514375
Physics-Based Modeling of Hole Mobility in Ultrathin-Body Silicon-On-Insulator MOSFETs
Physics-Based Modeling of Hole Mobility in Ultrathin-Body Silicon-On-Insulator MOSFETs // Proceedings of the 34th International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO) - Vol I. MEET and GVS / Biljanović, Petar ; Skala, Karolj (ur.).
Zagreb: Denona, 2011. str. 71-76 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni)
CROSBI ID: 514375 Za ispravke kontaktirajte CROSBI podršku putem web obrasca
Naslov
Physics-Based Modeling of Hole Mobility in Ultrathin-Body Silicon-On-Insulator MOSFETs
Autori
Poljak, Mirko ; Jovanović, Vladimir ; Suligoj, Tomislav
Vrsta, podvrsta i kategorija rada
Radovi u zbornicima skupova, cjeloviti rad (in extenso), znanstveni
Izvornik
Proceedings of the 34th International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO) - Vol I. MEET and GVS
/ Biljanović, Petar ; Skala, Karolj - Zagreb : Denona, 2011, 71-76
ISBN
978-953-233-060-1
Skup
34th International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO)
Mjesto i datum
Opatija, Hrvatska, 23.05.2011. - 27.05.2011
Vrsta sudjelovanja
Predavanje
Vrsta recenzije
Međunarodna recenzija
Ključne riječi
physics-based modeling; hole mobility; hole scattering; quantum confinement; ultra-thin silicon
Sažetak
A comprehensive study of hole mobility behavior with downscaling of silicon body thickness in single-gate ultrathin-body silicon-on-insulator MOSFETs on (100) surface is performed. We present a physics-based model that includes optical and acoustic phonon scattering, surface roughness scattering (including scattering induced by silicon thickness fluctuations) and Coulomb scattering. Although the model is based on effective mass approximation, comparison of simulation results and experimental data shows an excellent agreement, from 30 nm down to 3.8 nm-thick SOI pMOSFETs.
Izvorni jezik
Engleski
Znanstvena područja
Elektrotehnika
POVEZANOST RADA
Projekti:
036-0361566-1567 - Nanometarski elektronički elementi i sklopovske primjene (Suligoj, Tomislav, MZO ) ( CroRIS)
036-0982904-1642 - Sofisticirane poluvodičke strukture za komunikacijsku tehnologiju (Koričić, Marko, MZO ) ( CroRIS)
Ustanove:
Fakultet elektrotehnike i računarstva, Zagreb
