Pregled bibliografske jedinice broj: 509565
Characterization of a-Si:H P-I-N Photodiode Response
Characterization of a-Si:H P-I-N Photodiode Response // INFORMACIJE MIDEM-JOURNAL OF MICROELECTRONICS ELECTRONIC COMPONENTS AND MATERIALS, 42 (2012), 1; 23-28 (međunarodna recenzija, članak, znanstveni)
CROSBI ID: 509565 Za ispravke kontaktirajte CROSBI podršku putem web obrasca
Naslov
Characterization of a-Si:H P-I-N Photodiode Response
Autori
Gradišnik, Vera
Izvornik
INFORMACIJE MIDEM-JOURNAL OF MICROELECTRONICS ELECTRONIC COMPONENTS AND MATERIALS (0352-9045) 42
(2012), 1;
23-28
Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni
Ključne riječi
a-Si:H; defects; photodiode; retina
Sažetak
The a-Si:H p-i-n photodiode response due to simultaneous voltage and light pulses has a characteristic shape similar as that of retinal layers response. The characteristic shape of photodiode response, ascribed to trap states, is analyzed and discussed. The amplitude, waveform, latency and threshold voltages of the a-Si:H p-i-n photodiode responses were analyzed in dependence of voltage pulse amplitude and voltage and light pulses duration. The simultaneous stimuli influence on photodiode response has been explained through the excitation of dangling bond in i-layer. Described photodiode response behaviour suggests potential of development of a method for defect characterization and use of a- Si:H p-i-n PD as image sensor.
Izvorni jezik
Engleski
Znanstvena područja
Elektrotehnika
Citiraj ovu publikaciju:
Časopis indeksira:
- Web of Science Core Collection (WoSCC)
- Science Citation Index Expanded (SCI-EXP)
- SCI-EXP, SSCI i/ili A&HCI
- Scopus
Uključenost u ostale bibliografske baze podataka::
- INSPEC
- COBISS
- ISI Sci Search
- Research Alert
- Material Citation Index
