Naslov
Characterization of semiconductor materials and devices

Autori
Senčar, Damijan ; Gradišnik, Vera

Vrsta, podvrsta i kategorija rada
Radovi u zbornicima skupova, cjeloviti rad (in extenso), ostalo

Izvornik
Proceedings / 17th Yugoslav Conference on Microelectronics, MIEL / Stojadinović, N. - Oxford : Ljubljana : Oxford : Elsevier ; Ljubljana : MIDEM, 1989, 1989, 227-230

Skup
17th Yugoslav Conference on Microelectronics, MIEL

Mjesto i datum
Niš, Jugoslavija, 09.05.1989. - 11.05.1989

Vrsta sudjelovanja
Poster

Vrsta recenzije
Međunarodna recenzija

Ključne riječi
characterization ; semicondutor materials

Sažetak
A review of semiconductor material and device parameters evaluation with recently concepted HP test equipment is given. Some useful methods for semiconductor material and device propertieas determination are elaborated in more detail: using HP 1 MHz C Meter/C-V Plotter, C-V and C-t curves were measured on different samples, prepared in normal fabrication process by Iskra-Tovarna polprevodnikov Trbovlje for power and fast switching diodes. Several analysis of these plots are given resulting in measured values for important semiconductor structures parameters such as oxide fixed charge and mobile ions, impurity concentration in substates and diffused impurity profiles, etc. Pre-forming ZERBST analysis on measured C-t plots minority carrier lifetimes are evaluated.

Izvorni jezik
Engleski

Znanstvena područja
Elektrotehnika

Napomena
Rad je vazna uz projekt Raziskovalne skupnosti
Slovenije "Optoelektronika, projektni sklop IR
senzor" 03-2673-781 na Fakulteti za elektrotehniko
in računalništvo Univerza v Ljubljani, Slovenija,
Laboratorij za nelinearne elemente.

POVEZANOST RADA