Pregled bibliografske jedinice broj: 508871
Determinationand characterization of deep levels in gamma-ray irradiated GaN
Determinationand characterization of deep levels in gamma-ray irradiated GaN // Proceedings of the international conference on radiation physics of semiconductors and related materials / G.P.Kekelidze, V.I.Shakhovtsov (ur.).
Tbilisi: Tbilisi State University, 1980. str. 649-653 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni)
CROSBI ID: 508871 Za ispravke kontaktirajte CROSBI podršku putem web obrasca
Naslov
Determinationand characterization of deep levels in gamma-ray irradiated GaN
Autori
Mitra, Ved ; Pankove, Jacques ; Urli, Natko ; Etlinger, Božidar
Vrsta, podvrsta i kategorija rada
Radovi u zbornicima skupova, cjeloviti rad (in extenso), znanstveni
Izvornik
Proceedings of the international conference on radiation physics of semiconductors and related materials
/ G.P.Kekelidze, V.I.Shakhovtsov - Tbilisi : Tbilisi State University, 1980, 649-653
Skup
Radiation physics of semiconductors and related materials, 1979
Mjesto i datum
Tbilisi, SSSR, 13.09.1979. - 19.09.1979
Vrsta sudjelovanja
Predavanje
Vrsta recenzije
Međunarodna recenzija
Ključne riječi
GaN; gamma-ray irradiated; deep levels
Sažetak
SCLC and TSC measurements on metal-insulating-n-type (m-i-n) structures, grown by the chemical vapor deposition of GaN on sapphire, have been used in the characterization of as-grown defects and those introduced by Co60 gamma-radiation at room temperature. The exponential distribution of traps and the net acceptor introduction with the increase in the radiation dose have been observed.
Izvorni jezik
Engleski
