Pregled bibliografske jedinice broj: 508848
Preparation of ternary semiconducting compound Al2In12Se21
Preparation of ternary semiconducting compound Al2In12Se21 // Fizika, 10 (1978), Suplement; 29-33 (podatak o recenziji nije dostupan, članak, znanstveni)
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Naslov
Preparation of ternary semiconducting compound Al2In12Se21
Autori
Desnica, Dunja ; Desnica, Uroš ; Etlinger, Božidar
Izvornik
Fizika (0015-3206) 10
(1978), Suplement;
29-33
Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni
Ključne riječi
preparation ; ternary compound ; Al-In-Se
Sažetak
In a search for semiconducting compounds with the energy gaps corresponding to the visible portion of the optical spectrum, we have turned our attention to the ternary compound Al2In12Se21 (Al2Se3+6In2Se3) in Al-In-Se system. To our knowledge, this potentially prosperous material has not yet been synthetised and investigated mainly due two reasons: a) Constituents of the compoun have drastically different vapour pressures, so that the problem of very high vapour pressure of selenium appeares at the typical temperatures in common methods of crystal growth, and b) elemental Al react with silica (quartz) crucible forming Al2O3, so it is necessary to avoid direct contact of aluminum and silica at high temperatures.
Izvorni jezik
Engleski
Znanstvena područja
Fizika
Napomena
Predavanje, međunarodna recenzija, članak, znanstveni
POVEZANOST RADA
Ustanove:
Institut "Ruđer Bošković", Zagreb