Pregled bibliografske jedinice broj: 504910
Electrical characterisation of Si-SiO2 structures
Electrical characterisation of Si-SiO2 structures // Physica status solidi. C, Current topics in solid state physics, 8 (2011), 3; 816-818 doi:10.1002/pssc.201000076 (međunarodna recenzija, članak, znanstveni)
CROSBI ID: 504910 Za ispravke kontaktirajte CROSBI podršku putem web obrasca
Naslov
Electrical characterisation of Si-SiO2 structures
Autori
Capan, Ivana ; Pivac, Branko ; Slunjski, Robert
Izvornik
Physica status solidi. C, Current topics in solid state physics (1862-6351) 8
(2011), 3;
816-818
Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni
Ključne riječi
silicon ; oxide ; interface ; DLTS
Sažetak
The possibility of studying the Si-SiO2 structures by means of deep level transient spectroscopy (DLTS) has been presented. Contrary to the standard application of this technique, the temperature interval has to be reduced. In order to minimize the influence, and possible errors due to the capacitance base line shift and the Fermi level pinning, C-V characterization at different temperatures is crucial prior the DLTS measurement. The interface traps related to the Pb centers, distributed around 0.35 eV below the conduction band, have been observed.
Izvorni jezik
Engleski
Znanstvena područja
Fizika
POVEZANOST RADA
Projekti:
098-0982886-2866 - Temeljna svojstva nanostruktura i defekata u poluvodičima i dielektricima (Pivac, Branko, MZOS ) ( CroRIS)
Ustanove:
Institut "Ruđer Bošković", Zagreb
Citiraj ovu publikaciju:
Časopis indeksira:
- Scopus
