Pregled bibliografske jedinice broj: 502624
Efficient Calibration of Surface Scattering Models in Monte Carlo Device Simulators to Measurements
Efficient Calibration of Surface Scattering Models in Monte Carlo Device Simulators to Measurements // Proceedings of MIPRO/MEET 2010 / Petar, Biljanović (ur.).
Opatija: Hrvatska udruga za informacijsku i komunikacijsku tehnologiju, elektroniku i mikroelektroniku - MIPRO, 2010. str. 80-85 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni)
CROSBI ID: 502624 Za ispravke kontaktirajte CROSBI podršku putem web obrasca
Naslov
Efficient Calibration of Surface Scattering Models in Monte Carlo Device Simulators to Measurements
Autori
Grgec, Dalibor
Vrsta, podvrsta i kategorija rada
Radovi u zbornicima skupova, cjeloviti rad (in extenso), znanstveni
Izvornik
Proceedings of MIPRO/MEET 2010
/ Petar, Biljanović - Opatija : Hrvatska udruga za informacijsku i komunikacijsku tehnologiju, elektroniku i mikroelektroniku - MIPRO, 2010, 80-85
Skup
MIPRO
Mjesto i datum
Opatija, Hrvatska, 26.05.2010. - 28.05.2010
Vrsta sudjelovanja
Predavanje
Vrsta recenzije
Međunarodna recenzija
Ključne riječi
Monte Carlo; Device Simulation; Surface Scattering; Calibration
Sažetak
Monte Carlo (MC) device simulators offer an accurate and proven enhancement to device simulators based on balance equations (drift-diffusion and hydrodynamic). In order to keep in touch with the latest advances in gate insulator and channel doping MOS technology, new models for surface scattering processes have to be implemented in these simulators. Calibration of the new models is performed with measured low-field effective mobility in the channel. A method for simulation and extraction of low-field effective mobility for MC device simulators is presented. The method uses the microscopic relaxation time to evaluate the carrier mobility and can be used with unhomogeneus 1D channel doping profiles and quantummechanical carrier density. Using this method, efficient evaluation and calibration of new scattering models in MC device simulator is possible. Successful calibration of physically-based surface scattering model in the MC simulator is presented.
Izvorni jezik
Engleski
Znanstvena područja
Elektrotehnika
POVEZANOST RADA
Projekti:
036-0361566-1567 - Nanometarski elektronički elementi i sklopovske primjene (Suligoj, Tomislav, MZO ) ( CroRIS)
Ustanove:
Tehničko veleučilište u Zagrebu
Profili:
Dalibor Grgec
(autor)