Pregled bibliografske jedinice broj: 502618
Band-to-Band Tunneling Related Effects in a Thin MOS Structure
Band-to-Band Tunneling Related Effects in a Thin MOS Structure // Proceedings of the 13th Biannual Conference on Insulating Films on Semiconductors - INFOS
Barcelona, 2003. (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni)
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Naslov
Band-to-Band Tunneling Related Effects in a Thin MOS Structure
Autori
Vexler, Mikhail ; Shulekin, Alexander ; Grgec, Dalibor ; Grekhov, Igor ; Meinerzhagen, Bernd
Vrsta, podvrsta i kategorija rada
Radovi u zbornicima skupova, cjeloviti rad (in extenso), znanstveni
Izvornik
Proceedings of the 13th Biannual Conference on Insulating Films on Semiconductors - INFOS
/ - Barcelona, 2003
Skup
Proceedings of the 13th Biannual Conference on Insulating Films on Semiconductors - INFOS
Mjesto i datum
Barcelona, Španjolska, 18.06.2003. - 20.06.2003
Vrsta sudjelovanja
Predavanje
Vrsta recenzije
Međunarodna recenzija
Ključne riječi
band-to-band tunneling; MOS; oxide; minority; inversion layer
Sažetak
The effect of band-to-band tunneling (BBT) on the behaviour of MOS structures doped to 1018-1019 cm¡3 with an 2-3 nm oxide, is studied theoretically. The BBT is shown to supply the minority carriers toward the Si=SiO2 interface. This effect can support the inversion layer in the nonequilibrium and modify the I-V and C-V curves.
Izvorni jezik
Engleski
Znanstvena područja
Fizika, Elektrotehnika
