Pregled bibliografske jedinice broj: 499130
The photoelectrochemical properties of anodic Bi2O3 films
The photoelectrochemical properties of anodic Bi2O3 films // Electrochimica acta, 26 (1981), 8; 989-1000 doi:10.1016/0013-4686(81)85067-0 (međunarodna recenzija, članak, znanstveni)
CROSBI ID: 499130 Za ispravke kontaktirajte CROSBI podršku putem web obrasca
Naslov
The photoelectrochemical properties of anodic Bi2O3 films
Autori
Metikoš-Huković, Mirjana
Izvornik
Electrochimica acta (0013-4686) 26
(1981), 8;
989-1000
Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni
Ključne riječi
bismuth; anodic oxide films; semiconducting properties
Sažetak
Anodic oxide films on bismuth are amphoteric semiconductors with n-type and p-type behavior and an optical band gap of 2.8 eV at room temperature. The semiconducting properties were analyzed in situ during the study of electrochemical and photoelectrochemical reactions at the phase boundary oxide—electrolyte. The photopotential, photoconductivity and capacity measurements together with the electrochemical measurements have been shown to be valuable tools in the connection of bulk (electrophysical) properties with surface (electrochemical) properties. Thermodynamic stability is discussed and data are given which refer to the mechanism and kinetics of the cathodic decomposition and photodecomposition of the Bi2O3 layer.
Izvorni jezik
Engleski
Znanstvena područja
Kemija
POVEZANOST RADA
Ustanove:
Fakultet kemijskog inženjerstva i tehnologije, Zagreb
Profili:
Mirjana Metikoš-Huković
(autor)
Citiraj ovu publikaciju:
Časopis indeksira:
- Current Contents Connect (CCC)
- Web of Science Core Collection (WoSCC)
- SCI-EXP, SSCI i/ili A&HCI
- Scopus
