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Pregled bibliografske jedinice broj: 492506

N-channel MOSFETs Fabricated on Self-Assembled SiGe Dots for Strain-Enhanced Mobility

Jovanović, Vladimir; Biasotto, Cleber; Moers, Juergen; Grützmacher, Detlev; Zhang, Jianjun; Hrauda, Nina; Stoffel, Mathieu; Pezzoli, Fabio; Schmidt, Oliver G.; Miglio, Leo et al.
N-channel MOSFETs Fabricated on Self-Assembled SiGe Dots for Strain-Enhanced Mobility // Proceedings of 13th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2010
Veldhoven, Nizozemska, 2010. str. 101-104 (poster, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni)

CROSBI ID: 492506 Za ispravke kontaktirajte CROSBI podršku putem web obrasca

Naslov
N-channel MOSFETs Fabricated on Self-Assembled SiGe Dots for Strain-Enhanced Mobility

Autori
Jovanović, Vladimir ; Biasotto, Cleber ; Moers, Juergen ; Grützmacher, Detlev ; Zhang, Jianjun ; Hrauda, Nina ; Stoffel, Mathieu ; Pezzoli, Fabio ; Schmidt, Oliver G. ; Miglio, Leo ; Kosina, Hans ; Marzegalli, Anna ; Vastola, Guglielmo ; Mussler, Gregor ; Stangl, Julian ; Bauer, Guenther ; van der Cingel, Johan ; Bonera, Emiliano, Nanver, Lis K.

Vrsta, podvrsta i kategorija rada
Radovi u zbornicima skupova, cjeloviti rad (in extenso), znanstveni

Izvornik
Proceedings of 13th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2010 / - , 2010, 101-104

Skup
13th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2010

Mjesto i datum
Veldhoven, Nizozemska, 18.11.2010. - 19.11.2010

Vrsta sudjelovanja
Poster

Vrsta recenzije
Međunarodna recenzija

Ključne riječi
CMOS; excimer-laser annealing (ELA); low-temperature gate stack; SiGe; strain-enhanced mobility; Stranski– Krastanow (S–K) growth mode; ultrashallow source/drain junctions

Sažetak
The dots of SiGe are grown in a Stranski-Krastanow mode in regular arrays and are used as sources of biaxial tensile strain in the Si layer grown over them. N-channel MOSFETs are fabricated with the channel region in the top Si layer over the SiGe dot in order to investigate mobility enhancement as a result of the strain imparted by the underlying SiGe dot. A dedicated fabrication process is developed with the maximum processing temperature after the growth of the dot structure of 400 ºC and ultrashallow source/drain junctions selfaligned to the gate formed by ion implantation and excimer-laser annealing. The comparison with the reference FETs processed in parallel shows the increase of drain current of up to 22.5 %.

Izvorni jezik
Engleski

Znanstvena područja
Elektrotehnika



POVEZANOST RADA

Projekti:
036-0361566-1567 - Nanometarski elektronički elementi i sklopovske primjene (Suligoj, Tomislav, MZO ) ( CroRIS)
036-0982904-1642 - Sofisticirane poluvodičke strukture za komunikacijsku tehnologiju (Koričić, Marko, MZO ) ( CroRIS)

Ustanove:
Fakultet elektrotehnike i računarstva, Zagreb

Profili:

Avatar Url Vladimir Jovanović (autor)

Citiraj ovu publikaciju:

Jovanović, Vladimir; Biasotto, Cleber; Moers, Juergen; Grützmacher, Detlev; Zhang, Jianjun; Hrauda, Nina; Stoffel, Mathieu; Pezzoli, Fabio; Schmidt, Oliver G.; Miglio, Leo et al.
N-channel MOSFETs Fabricated on Self-Assembled SiGe Dots for Strain-Enhanced Mobility // Proceedings of 13th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2010
Veldhoven, Nizozemska, 2010. str. 101-104 (poster, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni)
Jovanović, V., Biasotto, C., Moers, J., Grützmacher, D., Zhang, J., Hrauda, N., Stoffel, M., Pezzoli, F., Schmidt, O. & Miglio, L. (2010) N-channel MOSFETs Fabricated on Self-Assembled SiGe Dots for Strain-Enhanced Mobility. U: Proceedings of 13th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2010.
@article{article, author = {Jovanovi\'{c}, Vladimir and Biasotto, Cleber and Moers, Juergen and Gr\"{u}tzmacher, Detlev and Zhang, Jianjun and Hrauda, Nina and Stoffel, Mathieu and Pezzoli, Fabio and Schmidt, Oliver G. and Miglio, Leo and Kosina, Hans and Marzegalli, Anna and Vastola, Guglielmo and Mussler, Gregor and Stangl, Julian and Bauer, Guenther and van der Cingel, Johan}, year = {2010}, pages = {101-104}, keywords = {CMOS, excimer-laser annealing (ELA), low-temperature gate stack, SiGe, strain-enhanced mobility, Stranski– Krastanow (S–K) growth mode, ultrashallow source/drain junctions}, title = {N-channel MOSFETs Fabricated on Self-Assembled SiGe Dots for Strain-Enhanced Mobility}, keyword = {CMOS, excimer-laser annealing (ELA), low-temperature gate stack, SiGe, strain-enhanced mobility, Stranski– Krastanow (S–K) growth mode, ultrashallow source/drain junctions}, publisherplace = {Veldhoven, Nizozemska} }
@article{article, author = {Jovanovi\'{c}, Vladimir and Biasotto, Cleber and Moers, Juergen and Gr\"{u}tzmacher, Detlev and Zhang, Jianjun and Hrauda, Nina and Stoffel, Mathieu and Pezzoli, Fabio and Schmidt, Oliver G. and Miglio, Leo and Kosina, Hans and Marzegalli, Anna and Vastola, Guglielmo and Mussler, Gregor and Stangl, Julian and Bauer, Guenther and van der Cingel, Johan}, year = {2010}, pages = {101-104}, keywords = {CMOS, excimer-laser annealing (ELA), low-temperature gate stack, SiGe, strain-enhanced mobility, Stranski– Krastanow (S–K) growth mode, ultrashallow source/drain junctions}, title = {N-channel MOSFETs Fabricated on Self-Assembled SiGe Dots for Strain-Enhanced Mobility}, keyword = {CMOS, excimer-laser annealing (ELA), low-temperature gate stack, SiGe, strain-enhanced mobility, Stranski– Krastanow (S–K) growth mode, ultrashallow source/drain junctions}, publisherplace = {Veldhoven, Nizozemska} }

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