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Pregled bibliografske jedinice broj: 492501

MOSFETs on Self-Assembled SiGe Dots with Strain- Enhanced Mobility

Jovanović, Vladimir; Biasotto, Cleber; Nanver, Lis K.; Moers, Juergen; Grützmacher, Detlev; Gerharz, Julian; Mussler, Gregor; van der Cingel, Johan; Zhang, Jianjun; Bauer, Guenther et al.
MOSFETs on Self-Assembled SiGe Dots with Strain- Enhanced Mobility // Proceedings of the 2010 International Conference on Solid-State and Integrated Circuit Technology ICSICT-2010 / Tang, Ting-Ao ; Jiang, Yu-Long (ur.).
Šangaj, Kina, 2010. str. 926-928 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni)

CROSBI ID: 492501 Za ispravke kontaktirajte CROSBI podršku putem web obrasca

Naslov
MOSFETs on Self-Assembled SiGe Dots with Strain- Enhanced Mobility

Autori
Jovanović, Vladimir ; Biasotto, Cleber ; Nanver, Lis K. ; Moers, Juergen ; Grützmacher, Detlev ; Gerharz, Julian ; Mussler, Gregor ; van der Cingel, Johan ; Zhang, Jianjun ; Bauer, Guenther ; Schmidt, Oliver G. ; Miglio, Leo

Vrsta, podvrsta i kategorija rada
Radovi u zbornicima skupova, cjeloviti rad (in extenso), znanstveni

Izvornik
Proceedings of the 2010 International Conference on Solid-State and Integrated Circuit Technology ICSICT-2010 / Tang, Ting-Ao ; Jiang, Yu-Long - , 2010, 926-928

ISBN
978-1-4244-5800-4

Skup
2010 10th IEEE International Conference on Solid- State and Integrated Circuit Technology

Mjesto i datum
Šangaj, Kina, 01.11.2010. - 04.11.2010

Vrsta sudjelovanja
Predavanje

Vrsta recenzije
Međunarodna recenzija

Ključne riječi
CMOS; excimer-laser annealing (ELA); low-temperature gate stack; SiGe; strain-enhanced mobility; Stranski– Krastanow (S–K) growth mode; ultrashallow source/drain junctions

Sažetak
Silicon-germanium dots grown in the Stranski- Krastanow mode are investigated as sources of strain for electron mobility enhancement in the silicon capping layer. N-channel MOSFETs with the channel in the Si cap-layer over the SiGe dot (DotFETs) are fabricated in a custom-made process and have an average increase in drain current of up to 22.5% compared to the reference devices. The sources of device variations related to the dimensions of the main gate-segment are identified and their influence on device performance evaluated, confirming the mobility enhancement.

Izvorni jezik
Engleski

Znanstvena područja
Elektrotehnika



POVEZANOST RADA

Projekti:
036-0361566-1567 - Nanometarski elektronički elementi i sklopovske primjene (Suligoj, Tomislav, MZO ) ( CroRIS)
036-0982904-1642 - Sofisticirane poluvodičke strukture za komunikacijsku tehnologiju (Koričić, Marko, MZO ) ( CroRIS)

Ustanove:
Fakultet elektrotehnike i računarstva, Zagreb

Profili:

Avatar Url Vladimir Jovanović (autor)

Citiraj ovu publikaciju:

Jovanović, Vladimir; Biasotto, Cleber; Nanver, Lis K.; Moers, Juergen; Grützmacher, Detlev; Gerharz, Julian; Mussler, Gregor; van der Cingel, Johan; Zhang, Jianjun; Bauer, Guenther et al.
MOSFETs on Self-Assembled SiGe Dots with Strain- Enhanced Mobility // Proceedings of the 2010 International Conference on Solid-State and Integrated Circuit Technology ICSICT-2010 / Tang, Ting-Ao ; Jiang, Yu-Long (ur.).
Šangaj, Kina, 2010. str. 926-928 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni)
Jovanović, V., Biasotto, C., Nanver, L., Moers, J., Grützmacher, D., Gerharz, J., Mussler, G., van der Cingel, J., Zhang, J. & Bauer, G. (2010) MOSFETs on Self-Assembled SiGe Dots with Strain- Enhanced Mobility. U: Tang, T. & Jiang, Y. (ur.)Proceedings of the 2010 International Conference on Solid-State and Integrated Circuit Technology ICSICT-2010.
@article{article, author = {Jovanovi\'{c}, Vladimir and Biasotto, Cleber and Nanver, Lis K. and Moers, Juergen and Gr\"{u}tzmacher, Detlev and Gerharz, Julian and Mussler, Gregor and van der Cingel, Johan and Zhang, Jianjun and Bauer, Guenther and Schmidt, Oliver G. and Miglio, Leo}, year = {2010}, pages = {926-928}, keywords = {CMOS, excimer-laser annealing (ELA), low-temperature gate stack, SiGe, strain-enhanced mobility, Stranski– Krastanow (S–K) growth mode, ultrashallow source/drain junctions}, isbn = {978-1-4244-5800-4}, title = {MOSFETs on Self-Assembled SiGe Dots with Strain- Enhanced Mobility}, keyword = {CMOS, excimer-laser annealing (ELA), low-temperature gate stack, SiGe, strain-enhanced mobility, Stranski– Krastanow (S–K) growth mode, ultrashallow source/drain junctions}, publisherplace = {\v{S}angaj, Kina} }
@article{article, author = {Jovanovi\'{c}, Vladimir and Biasotto, Cleber and Nanver, Lis K. and Moers, Juergen and Gr\"{u}tzmacher, Detlev and Gerharz, Julian and Mussler, Gregor and van der Cingel, Johan and Zhang, Jianjun and Bauer, Guenther and Schmidt, Oliver G. and Miglio, Leo}, year = {2010}, pages = {926-928}, keywords = {CMOS, excimer-laser annealing (ELA), low-temperature gate stack, SiGe, strain-enhanced mobility, Stranski– Krastanow (S–K) growth mode, ultrashallow source/drain junctions}, isbn = {978-1-4244-5800-4}, title = {MOSFETs on Self-Assembled SiGe Dots with Strain- Enhanced Mobility}, keyword = {CMOS, excimer-laser annealing (ELA), low-temperature gate stack, SiGe, strain-enhanced mobility, Stranski– Krastanow (S–K) growth mode, ultrashallow source/drain junctions}, publisherplace = {\v{S}angaj, Kina} }

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