Naslov
Al-mediated Solid-Phase Epitaxy of Silicon-On- Insulator

Autori
Šakić, Agata ; Civale, Yann ; Nanver, Lis K. ; Biasotto, Cleber ; Jovanović, Vladimir

Vrsta, podvrsta i kategorija rada
Radovi u zbornicima skupova, cjeloviti rad (in extenso), znanstveni

Izvornik
Materials Research Society Symposium Proceedings, Volume 1245 / Wang, Qi ; Yan, Baojie ; Flewitt, Andrew ; Tsai, Chuang-Chuang ; Higashi, Seiichiro - Warrendale (PA) : Materials Research Society, 2010, 427-432

ISBN
978-1-60511-222-0

Skup
Materials Research Society Spring Meeteing

Mjesto i datum
San Francisco (CA), Sjedinjene Američke Države, 05.04.2010. - 09.04.2010

Vrsta sudjelovanja
Predavanje

Vrsta recenzije
Međunarodna recenzija

Ključne riječi
silicon-on-insulator; solid-phase epitaxy; aluminum mediated

Sažetak
Silicon-on-insulator (SOI) regions have been grown on lithographically predetermined positions by Al- mediated Solid-Phase Epitaxy (SPE) of amorphous silicon (α-Si). A controllable Si lateral overgrowth is induced from windows formed in silicon dioxide (SiO2) to the crystalline Si substrate. The resulting hundred-of-nanometer large areas of high-quality monocrystalline SOI are formed at the temperatures that can be as low as 400 °C. The as-obtained SOI regions were found to take on the same crystal orientation as the (100)-Si substrate and have the ability to merge seamlessly over the oxide.

Izvorni jezik
Engleski

Znanstvena područja
Elektrotehnika

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