Pregled bibliografske jedinice broj: 489922
Numerical model for simulation of transport and recombination in OLEDs
Numerical model for simulation of transport and recombination in OLEDs // Synthetic metals, 121 (2001), 1-3; 1513-1514 doi:10.1016/S0379-6779(00)01138-3 (međunarodna recenzija, članak, znanstveni)
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Naslov
Numerical model for simulation of transport and recombination in OLEDs
Autori
Masenelli, B. ; Tutiš, E. ; Bussac, M.N ; and Zuppiroli, L.
Izvornik
Synthetic metals (0379-6779) 121
(2001), 1-3;
1513-1514
Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni
Ključne riječi
multilayer ; OLED ; numerical model ; recombination ; LiF
Sažetak
We present a recently developed numerical code for OLED simulation. This code contains a detailed description of contacts, charge transport and recombination. The route towards the simulation of a complex multilayer device is detailed through examples of single-layer and bilayer devices simulations as well as through the investigation of the action of LiF thin film on injection.
Izvorni jezik
Engleski
Znanstvena područja
Fizika
Napomena
16th International Conference on Science and Technology of Synthetic Metals (ICSM 2000)
Citiraj ovu publikaciju:
Časopis indeksira:
- Current Contents Connect (CCC)
- Web of Science Core Collection (WoSCC)
- Science Citation Index Expanded (SCI-EXP)
- SCI-EXP, SSCI i/ili A&HCI
- Scopus
