Naslov
Extrinsic base effect on the Horizontal Current Bipolar Transistor (HCBT) electrical characteristics

Autori
Koričić, Marko ; Suligoj, Tomislav ; Mochizuki, H. ; Morita, S. ; Shinomura, K. ; Imai, H.

Vrsta, podvrsta i kategorija rada
Radovi u zbornicima skupova, cjeloviti rad (in extenso), znanstveni

Izvornik
Proceedings of the 46th International Conference on Microelectronics, Devices and Materials (MIDEM) / Đonlagić, D. ; Šorli, I. ; Šorli, P. - Ljubljana : BIRO M, 2010, 95-100

ISBN
978-961-92933-0-0

Skup
International Conference on Microelectronics, Devices and Materials (MIDEM)

Mjesto i datum
Radenci, Slovenija, 29.09.2010. - 01.10.2010

Vrsta sudjelovanja
Predavanje

Vrsta recenzije
Međunarodna recenzija

Ključne riječi
Horizontal Current Bipolar Transistor (HCBT); 0.18 µm BiCMOS; extrinsic base

Sažetak
Design issues associated with the HCBT extrinsic base fabrication in 0.18 µm BiCMOS process are addressed. Due to small transistor height of 350 nm, shallow extrinsic base is desired. The lower limit for junction depth is set by the excessive leakage current and soft breakdown behavior of the reverse base-collector I-V characteristics, which is characteristic for shallow silicided junctions. Reverse and forward characteristics are analyzed for two extrinsic base implantation parameters, with and without silicide formed over the perimeter part of the active area. It is shown that perimeter part of the extrinsic base junction is susceptible to junction leakage and should be protected from silicidation. Influence of the extrinsic base concentration on transistors’ current gain β is analyzed by device simulation. Current gain β is improved by higher extrinsic base concentration.

Izvorni jezik
Engleski

Znanstvena područja
Elektrotehnika

POVEZANOST RADA