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Pregled bibliografske jedinice broj: 488225

2-D front- and back-gate potential distribution model of submicrometer VFD SONFET


Sviličić, Boris; Jovanović, Vladimir; Suligoj, Tomislav
2-D front- and back-gate potential distribution model of submicrometer VFD SONFET // Proceedings of the 33rd International Convention MIPRO / Biljanović, Petar ; Skala, Karolj (ur.).
Zagreb: Denona, 2010. str. 69-73 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni)


CROSBI ID: 488225 Za ispravke kontaktirajte CROSBI podršku putem web obrasca

Naslov
2-D front- and back-gate potential distribution model of submicrometer VFD SONFET

Autori
Sviličić, Boris ; Jovanović, Vladimir ; Suligoj, Tomislav

Vrsta, podvrsta i kategorija rada
Radovi u zbornicima skupova, cjeloviti rad (in extenso), znanstveni

Izvornik
Proceedings of the 33rd International Convention MIPRO / Biljanović, Petar ; Skala, Karolj - Zagreb : Denona, 2010, 69-73

Skup
33rd International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO)

Mjesto i datum
Opatija, Hrvatska, 24.05.2010. - 28.05.2010

Vrsta sudjelovanja
Predavanje

Vrsta recenzije
Međunarodna recenzija

Ključne riječi
analytical modeling; potential distribution; vertical SONFET

Sažetak
Analytical model for the 2D front-gate and the back-gate surface potential distribution of vertical fully depleted (VFD) silicon-on-nothing (SON) FET is developed. The analytical expressions of the front-gate and the back-gate potential distributions are derived by solving 2-D Poisson's equation using boundary conditions that are special for the VFD SONFET and assuming a second-order polynomial function for the potential distribution in the device body. The accuracy of the model is verified by comparing the model predictions with the 2-D numerical device simulation results obtained using Medici and very good agreement is obtained.

Izvorni jezik
Engleski

Znanstvena područja
Elektrotehnika



POVEZANOST RADA


Projekti:
036-0361566-1567 - Nanometarski elektronički elementi i sklopovske primjene (Suligoj, Tomislav, MZO ) ( CroRIS)
036-0982904-1642 - Sofisticirane poluvodičke strukture za komunikacijsku tehnologiju (Koričić, Marko, MZO ) ( CroRIS)

Ustanove:
Fakultet elektrotehnike i računarstva, Zagreb


Citiraj ovu publikaciju:

Sviličić, Boris; Jovanović, Vladimir; Suligoj, Tomislav
2-D front- and back-gate potential distribution model of submicrometer VFD SONFET // Proceedings of the 33rd International Convention MIPRO / Biljanović, Petar ; Skala, Karolj (ur.).
Zagreb: Denona, 2010. str. 69-73 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni)
Sviličić, B., Jovanović, V. & Suligoj, T. (2010) 2-D front- and back-gate potential distribution model of submicrometer VFD SONFET. U: Biljanović, P. & Skala, K. (ur.)Proceedings of the 33rd International Convention MIPRO.
@article{article, author = {Svili\v{c}i\'{c}, Boris and Jovanovi\'{c}, Vladimir and Suligoj, Tomislav}, year = {2010}, pages = {69-73}, keywords = {analytical modeling, potential distribution, vertical SONFET}, title = {2-D front- and back-gate potential distribution model of submicrometer VFD SONFET}, keyword = {analytical modeling, potential distribution, vertical SONFET}, publisher = {Denona}, publisherplace = {Opatija, Hrvatska} }
@article{article, author = {Svili\v{c}i\'{c}, Boris and Jovanovi\'{c}, Vladimir and Suligoj, Tomislav}, year = {2010}, pages = {69-73}, keywords = {analytical modeling, potential distribution, vertical SONFET}, title = {2-D front- and back-gate potential distribution model of submicrometer VFD SONFET}, keyword = {analytical modeling, potential distribution, vertical SONFET}, publisher = {Denona}, publisherplace = {Opatija, Hrvatska} }




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