Pregled bibliografske jedinice broj: 486495
Novel Horizontal Current Bipolar Transistor (HCBT) in AKM's 0, 18μm BiCMOS Process –Polysilicon Re-crystallization Problem, Process Uniformity and Device Simulation
Novel Horizontal Current Bipolar Transistor (HCBT) in AKM's 0, 18μm BiCMOS Process –Polysilicon Re-crystallization Problem, Process Uniformity and Device Simulation, 2008. (ekspertiza).
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Naslov
Novel Horizontal Current Bipolar Transistor (HCBT) in AKM's 0, 18μm BiCMOS Process –Polysilicon Re-crystallization Problem, Process Uniformity and Device Simulation
Autori
Suligoj, Tomislav ; Koričić, Marko ; Poljak, Mirko
Izvornik
Research on the Novel Horizontal Current Bipolar Transistor (HCBT) Structures
Vrsta, podvrsta
Ostale vrste radova, ekspertiza
Godina
2008
Ključne riječi
bipolar transistor; HCBT; semiconductor technology; BiCMOS
Sažetak
The CMOS gate polysilicon placed near the HCBT active region causes the re-crystallization of the deposited amorphous silicon and affects the wet etching process afterward. Hence, novel deposition conditions are investigated and pure amorphous deposited films resulted. Device simulations with novel doping profiles are carried out.
Izvorni jezik
Engleski
Znanstvena područja
Elektrotehnika
POVEZANOST RADA
Ustanove:
Fakultet elektrotehnike i računarstva, Zagreb
