Pregled bibliografske jedinice broj: 486478
Novel Horizontal Current Bipolar Transistor (HCBT) in AKM's 0, 18μm BiCMOS Process – New Planarization of Polysilicon, Simulation and Mask Design
Novel Horizontal Current Bipolar Transistor (HCBT) in AKM's 0, 18μm BiCMOS Process – New Planarization of Polysilicon, Simulation and Mask Design, 2008. (ekspertiza).
CROSBI ID: 486478 Za ispravke kontaktirajte CROSBI podršku putem web obrasca
Naslov
Novel Horizontal Current Bipolar Transistor (HCBT) in AKM's 0, 18μm BiCMOS Process – New Planarization of Polysilicon, Simulation and Mask Design
Autori
Suligoj, Tomislav ; Koričić, Marko
Izvornik
Research on the Novel Horizontal Current Bipolar Transistor (HCBT) Structures
Vrsta, podvrsta
Ostale vrste radova, ekspertiza
Godina
2008
Ključne riječi
bipolar transistor; HCBT; semiconductor technology; BiCMOS
Sažetak
Since the shape of polysilicon in the standard HCBT structure limits its current gain and reliability, a novel planarization technique is developed by placing CMOS gate polysilicon near the active HCBT region. This process is simulated by numerical simulators and new lithography masks has been developed.
Izvorni jezik
Engleski
Znanstvena područja
Elektrotehnika
POVEZANOST RADA
Ustanove:
Fakultet elektrotehnike i računarstva, Zagreb
