Pregled bibliografske jedinice broj: 486474
Horizontal Current Bipolar Transistor (HCBT) in AKM's 0, 18μm BiCMOS Process: 4th Lot Device Simulation
Horizontal Current Bipolar Transistor (HCBT) in AKM's 0, 18μm BiCMOS Process: 4th Lot Device Simulation, 2007. (ekspertiza).
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Naslov
Horizontal Current Bipolar Transistor (HCBT) in AKM's 0, 18μm BiCMOS Process: 4th Lot Device Simulation
Autori
Suligoj, Tomislav ; Koričić, Marko ; Jovanović, Vladimir ; Grgec, Dalibor ; Poljak, Mirko
Izvornik
Research on the Novel Horizontal Current Bipolar Transistor (HCBT) Structures
Vrsta, podvrsta
Ostale vrste radova, ekspertiza
Godina
2007
Ključne riječi
bipolar transistor; HCBT; semiconductor technology; BiCMOS
Sažetak
Numerical TCAD simulations of HCBT fabrication is performed and the resulting doping profiles are fitted tot he measured SIMS results. Numerical simulations of electrical characteristics of the resulting transistor structures are done and the the fabrication sequence is optimized to obtain maximum cut-off frequency, maximum frequency of oscillations and the product of cut-off frequency and breakdown voltage.
Izvorni jezik
Engleski
Znanstvena područja
Elektrotehnika
POVEZANOST RADA
Ustanove:
Fakultet elektrotehnike i računarstva, Zagreb
Profili:
Dalibor Grgec
(autor)
Vladimir Jovanović
(autor)
Tomislav Suligoj
(autor)
Mirko Poljak
(autor)
Marko Koričić
(autor)