Naslov
Collector Region Design and Optimization in Horizontal Current Bipolar Transistor (HCBT)

Autori
Suligoj, Tomislav ; Koričić, Marko ; Mochizuki, H. ; Morita, S. ; Shinomura, K. ; Imai, H.

Vrsta, podvrsta i kategorija rada
Radovi u zbornicima skupova, cjeloviti rad (in extenso), znanstveni

Izvornik
Proceedings of the 2010 Bipolar/BiCMOS Circuits and Technology Meeting / Ngo, David ; Alvin, Joseph - Austin (TX) : Institute of Electrical and Electronics Engineers (IEEE), 2010, 212-215

ISBN
978-1-4244-8577-2

Skup
2010 Bipolar/BiCMOS Circuts and Technology Meeting

Mjesto i datum
Austin (TX), Sjedinjene Američke Države, 04.10.2010. - 06.10.2010

Vrsta sudjelovanja
Predavanje

Vrsta recenzije
Međunarodna recenzija

Ključne riječi
BiCMOS integrated circuits; Bipolar transistors; HF radio communication; Horizontal Current Bipolar Transistor

Sažetak
Three different types of the n-collector region of Horizontal Current Bipolar Transistor (HCBT) are analyzed and compared. The optimum n-collector profile suppresses the charge sharing effect between the intrinsic and extrinsic base regions, resulting in the uniform base width and electric field in the intrinsic transistor. This implies a maximum BVCEO and an optimum fTBVCEO product among compared structures. The HCBT with a selectively implanted collector (SIC) is introduced and examined. It reduces RC and increases fT comparing to the other n-collector designs. The analyses give the guidelines for the optimum HCBT design for targeted applications.

Izvorni jezik
Engleski

Znanstvena područja
Elektrotehnika

POVEZANOST RADA