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Pregled bibliografske jedinice broj: 484405

Physical mechanisms of electron mobility behavior in ultra-thin body double-gate MOSFETs with (100) and (111) active surfaces

Poljak, Mirko; Jovanović, Vladimir; Suligoj, Tomislav
Physical mechanisms of electron mobility behavior in ultra-thin body double-gate MOSFETs with (100) and (111) active surfaces // Proceedings of the 46th International Conference on Microelectronics, Devices and Materials (MIDEM) / Đonlagić, D. ; Šorli, I. ; Šorli, P. (ur.).
Ljubljana: BIRO M, 2010. str. 101-105 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni)

CROSBI ID: 484405 Za ispravke kontaktirajte CROSBI podršku putem web obrasca

Naslov
Physical mechanisms of electron mobility behavior in ultra-thin body double-gate MOSFETs with (100) and (111) active surfaces

Autori
Poljak, Mirko ; Jovanović, Vladimir ; Suligoj, Tomislav

Vrsta, podvrsta i kategorija rada
Radovi u zbornicima skupova, cjeloviti rad (in extenso), znanstveni

Izvornik
Proceedings of the 46th International Conference on Microelectronics, Devices and Materials (MIDEM) / Đonlagić, D. ; Šorli, I. ; Šorli, P. - Ljubljana : BIRO M, 2010, 101-105

ISBN
978-961-92933-0-0

Skup
International Conference on Microelectronics, Devices and Materials (MIDEM)

Mjesto i datum
Radenci, Slovenija, 29.09.2010. - 01.10.2010

Vrsta sudjelovanja
Predavanje

Vrsta recenzije
Međunarodna recenzija

Ključne riječi
double-gate MOSFET; Si (100); Si (111); physics-based modeling; quantum modeling; mobility

Sažetak
Influence of downscaling of body thickness on electron mobility in double-gate MOSFETs with ultra-thin body is investigated for (100) and (111) orientations of the active surface. Effective mass approximation is used in our Schrödinger-Poisson solver while momentum relaxation time approximation is used for the calculation of electron scattering rates. Intravalley acoustic, intervalley optical and surface-roughness scattering is included in our simulations. Behavior of electron mobility is investigated by examination of form-factors, ladder and subband repopulation effects and field-induced perturbations. Compared to (100) devices, (111)-oriented UTB double-gate MOSFETs exhibit mobility enhancement for body thickness of approximately 8 nm and only at high inversion charge densities.

Izvorni jezik
Engleski

Znanstvena područja
Elektrotehnika



POVEZANOST RADA

Projekti:
036-0361566-1567 - Nanometarski elektronički elementi i sklopovske primjene (Suligoj, Tomislav, MZO ) ( CroRIS)
036-0982904-1642 - Sofisticirane poluvodičke strukture za komunikacijsku tehnologiju (Koričić, Marko, MZO ) ( CroRIS)

Ustanove:
Fakultet elektrotehnike i računarstva, Zagreb

Profili:

Avatar Url Vladimir Jovanović (autor)

Avatar Url Tomislav Suligoj (autor)

Avatar Url Mirko Poljak (autor)

Citiraj ovu publikaciju:

Poljak, Mirko; Jovanović, Vladimir; Suligoj, Tomislav
Physical mechanisms of electron mobility behavior in ultra-thin body double-gate MOSFETs with (100) and (111) active surfaces // Proceedings of the 46th International Conference on Microelectronics, Devices and Materials (MIDEM) / Đonlagić, D. ; Šorli, I. ; Šorli, P. (ur.).
Ljubljana: BIRO M, 2010. str. 101-105 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni)
Poljak, M., Jovanović, V. & Suligoj, T. (2010) Physical mechanisms of electron mobility behavior in ultra-thin body double-gate MOSFETs with (100) and (111) active surfaces. U: Đonlagić, D., Šorli, I. & Šorli, P. (ur.)Proceedings of the 46th International Conference on Microelectronics, Devices and Materials (MIDEM).
@article{article, author = {Poljak, Mirko and Jovanovi\'{c}, Vladimir and Suligoj, Tomislav}, year = {2010}, pages = {101-105}, keywords = {double-gate MOSFET, Si (100), Si (111), physics-based modeling, quantum modeling, mobility}, isbn = {978-961-92933-0-0}, title = {Physical mechanisms of electron mobility behavior in ultra-thin body double-gate MOSFETs with (100) and (111) active surfaces}, keyword = {double-gate MOSFET, Si (100), Si (111), physics-based modeling, quantum modeling, mobility}, publisher = {BIRO M}, publisherplace = {Radenci, Slovenija} }
@article{article, author = {Poljak, Mirko and Jovanovi\'{c}, Vladimir and Suligoj, Tomislav}, year = {2010}, pages = {101-105}, keywords = {double-gate MOSFET, Si (100), Si (111), physics-based modeling, quantum modeling, mobility}, isbn = {978-961-92933-0-0}, title = {Physical mechanisms of electron mobility behavior in ultra-thin body double-gate MOSFETs with (100) and (111) active surfaces}, keyword = {double-gate MOSFET, Si (100), Si (111), physics-based modeling, quantum modeling, mobility}, publisher = {BIRO M}, publisherplace = {Radenci, Slovenija} }

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