Naslov
N-Channel MOSFETs Fabricated on SiGe Dots for Strain-Enhanced Mobility

Autori
Jovanović, Vladimir ; Biasotto, Cleber ; Nanver, Lis K ; Moers, Juergen ; Gruetzmacher, Detlev ; Gerharz Julian ; Mussler, Gregor ; van der Cingel, Johan ; Zhang Jianjun ; Bauer, Guenther ; Schmidt, Oliver G ; Miglio, Leo

Izvornik
IEEE electron device letters (0741-3106) 31 (2010), 10; 1083-1085

Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni

Ključne riječi
CMOS; excimer-laser annealing (ELA); low-temperature gate stack; SiGe; strain-enhanced mobility; Stranski– Krastanow (S–K) growth mode; ultrashallow source/drain junctions

Sažetak
The silicon germanium dots grown in the Stranski- Krastanow mode are used to induce biaxial tensile strain in a silicon capping layer. A high Ge content and correspondingly high Si strain levels are reached due to the 3-D growth of the dots. The n-channel MOS devices, referred to in this letter as DotFETs, are processed with the main gate segment above the strained Si layer on a single dot. To prevent the intermixing of the Si/SiGe/Si structure, a novel low-temperature FET structure processed below 400 ◦C has been implemented: The ultrashallow source/drain junctions formed by excimer-laser annealing in the full-melt mode of ion-implanted dopants are self-aligned to a metal gate. The crystallinity of the structure is preserved throughout the processing, and compared to reference devices, an average increase in the drain current of up to 22.5% is obtained.

Izvorni jezik
Engleski

Znanstvena područja
Elektrotehnika

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