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Pregled bibliografske jedinice broj: 482042

Modeling study on carrier mobility in ultra-thin body FinFETs with circuit-level implications

Poljak, Mirko; Jovanović, Vladimir; Suligoj, Tomislav
Modeling study on carrier mobility in ultra-thin body FinFETs with circuit-level implications // Proceedings of the 40th European Solid-State Device Research Conference / Gamiz, Francisco ; Godoy, Andres (ur.).
Sevilla: Institute of Electrical and Electronics Engineers (IEEE), 2010. str. 242-245 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni)

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Naslov
Modeling study on carrier mobility in ultra-thin body FinFETs with circuit-level implications

Autori
Poljak, Mirko ; Jovanović, Vladimir ; Suligoj, Tomislav

Vrsta, podvrsta i kategorija rada
Radovi u zbornicima skupova, cjeloviti rad (in extenso), znanstveni

Izvornik
Proceedings of the 40th European Solid-State Device Research Conference / Gamiz, Francisco ; Godoy, Andres - Sevilla : Institute of Electrical and Electronics Engineers (IEEE), 2010, 242-245

ISBN
978-1-4244-6659-7

Skup
European Solid-State Device Research Conference

Mjesto i datum
Sevilla, Španjolska, 14.09.2010. - 16.09.2010

Vrsta sudjelovanja
Predavanje

Vrsta recenzije
Međunarodna recenzija

Ključne riječi
ultra-thin body; FinFET; electron mobility; hole mobility; quantum confinement; physics-based modeling; SRAM

Sažetak
Influence of different active surface orientations and fin-width scaling on electron and hole mobility in ultra-thin body FinFETs is examined. Results of mobility modeling are validated on experimental data, including (111)-oriented FinFETs from our previous work which are here proven to exhibit no mobility degradation caused by fin-width fluctuations. We show that (111)-oriented FinFETs are the optimum solution when performance and layout area of 6T SRAM cell are concerned, since they enable SRAM with a minimum number of fins per cell.

Izvorni jezik
Engleski

Znanstvena područja
Elektrotehnika



POVEZANOST RADA

Projekti:
036-0361566-1567 - Nanometarski elektronički elementi i sklopovske primjene (Suligoj, Tomislav, MZO ) ( CroRIS)
036-0982904-1642 - Sofisticirane poluvodičke strukture za komunikacijsku tehnologiju (Koričić, Marko, MZO ) ( CroRIS)

Ustanove:
Fakultet elektrotehnike i računarstva, Zagreb

Profili:

Avatar Url Tomislav Suligoj (autor)

Avatar Url Vladimir Jovanović (autor)

Avatar Url Mirko Poljak (autor)

Citiraj ovu publikaciju:

Poljak, Mirko; Jovanović, Vladimir; Suligoj, Tomislav
Modeling study on carrier mobility in ultra-thin body FinFETs with circuit-level implications // Proceedings of the 40th European Solid-State Device Research Conference / Gamiz, Francisco ; Godoy, Andres (ur.).
Sevilla: Institute of Electrical and Electronics Engineers (IEEE), 2010. str. 242-245 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni)
Poljak, M., Jovanović, V. & Suligoj, T. (2010) Modeling study on carrier mobility in ultra-thin body FinFETs with circuit-level implications. U: Gamiz, F. & Godoy, A. (ur.)Proceedings of the 40th European Solid-State Device Research Conference.
@article{article, author = {Poljak, Mirko and Jovanovi\'{c}, Vladimir and Suligoj, Tomislav}, year = {2010}, pages = {242-245}, keywords = {ultra-thin body, FinFET, electron mobility, hole mobility, quantum confinement, physics-based modeling, SRAM}, isbn = {978-1-4244-6659-7}, title = {Modeling study on carrier mobility in ultra-thin body FinFETs with circuit-level implications}, keyword = {ultra-thin body, FinFET, electron mobility, hole mobility, quantum confinement, physics-based modeling, SRAM}, publisher = {Institute of Electrical and Electronics Engineers (IEEE)}, publisherplace = {Sevilla, \v{S}panjolska} }
@article{article, author = {Poljak, Mirko and Jovanovi\'{c}, Vladimir and Suligoj, Tomislav}, year = {2010}, pages = {242-245}, keywords = {ultra-thin body, FinFET, electron mobility, hole mobility, quantum confinement, physics-based modeling, SRAM}, isbn = {978-1-4244-6659-7}, title = {Modeling study on carrier mobility in ultra-thin body FinFETs with circuit-level implications}, keyword = {ultra-thin body, FinFET, electron mobility, hole mobility, quantum confinement, physics-based modeling, SRAM}, publisher = {Institute of Electrical and Electronics Engineers (IEEE)}, publisherplace = {Sevilla, \v{S}panjolska} }

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