Pregled bibliografske jedinice broj: 472283
FinFET: Optimization and Analysis of Specific Effects
FinFET: Optimization and Analysis of Specific Effects // European School on Nanosciences and Nanotechnologies (ESONN), August-September 2009, Grenoble, France
Grenoble, Francuska, 2009. (poster, nije recenziran, neobjavljeni rad, znanstveni)
CROSBI ID: 472283 Za ispravke kontaktirajte CROSBI podršku putem web obrasca
Naslov
FinFET: Optimization and Analysis of Specific Effects
Autori
Poljak, Mirko
Vrsta, podvrsta i kategorija rada
Sažeci sa skupova, neobjavljeni rad, znanstveni
Izvornik
European School on Nanosciences and Nanotechnologies (ESONN), August-September 2009, Grenoble, France
/ - , 2009
Skup
European School on Nanosciences and Nanotechnologies
Mjesto i datum
Grenoble, Francuska, 23.08.2009. - 12.09.2009
Vrsta sudjelovanja
Poster
Vrsta recenzije
Nije recenziran
Ključne riječi
FinFET; double-gate; triple-gate; corner effects; quantum confinement; body thickness scaling; electron mobility; phonon scattering
Sažetak
Advantages and disadvantages of bulk and SOI FinFET devices. Physical background and method of elimination of corner effects in tri-gate FinFETs. Quantum mechanical calculations of phonon-limited electron mobility in ultra-scaled FinFETs.
Izvorni jezik
Engleski
Znanstvena područja
Elektrotehnika
POVEZANOST RADA
Ustanove:
Fakultet elektrotehnike i računarstva, Zagreb
