Pregled bibliografske jedinice broj: 472274
Quantum-Mechanical Modeling of Phonon-Limited Electron Mobility in Bulk MOSFETs, Ultrathin-Body SOI MOSFETs and Double-Gate MOSFETs for Different Orientations
Quantum-Mechanical Modeling of Phonon-Limited Electron Mobility in Bulk MOSFETs, Ultrathin-Body SOI MOSFETs and Double-Gate MOSFETs for Different Orientations // Proceedings of the 33rd International Convention MIPRO - Vol I. MEET and GVS / Biljanović, Petar ; Skala, Karolj (ur.).
Zagreb: Denona, 2010. str. 74-79 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni)
CROSBI ID: 472274 Za ispravke kontaktirajte CROSBI podršku putem web obrasca
Naslov
Quantum-Mechanical Modeling of Phonon-Limited Electron Mobility in Bulk MOSFETs, Ultrathin-Body SOI MOSFETs and Double-Gate MOSFETs for Different Orientations
Autori
Poljak, Mirko ; Jovanović, Vladimir ; Suligoj, Tomislav
Vrsta, podvrsta i kategorija rada
Radovi u zbornicima skupova, cjeloviti rad (in extenso), znanstveni
Izvornik
Proceedings of the 33rd International Convention MIPRO - Vol I. MEET and GVS
/ Biljanović, Petar ; Skala, Karolj - Zagreb : Denona, 2010, 74-79
ISBN
978-953-233-051-9
Skup
33rd International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO)
Mjesto i datum
Opatija, Hrvatska, 24.05.2010. - 28.05.2010
Vrsta sudjelovanja
Predavanje
Vrsta recenzije
Međunarodna recenzija
Ključne riječi
mobility; phonon scattering; quantum confinement; ultra-thin body; double-gate MOSFET
Sažetak
A comprehensive study of low-field phonon-limited mobility behavior with downscaling of silicon body thickness in ultrathin-body SOI MOSFETs and double-gate MOSFETs is presented. Phonon-limited mobility is obtained by self-consistent Schrödinger-Poisson simulations and momentum relaxation rate calculations. Single- and double-gate devices with (100), (110) and (111) active surfaces and body thickness down to 2 nm are investigated. Physical mechanisms which govern mobility behavior are studied by calculating form factors and ladder/subband occupancy.
Izvorni jezik
Engleski
Znanstvena područja
Elektrotehnika
POVEZANOST RADA
Projekti:
036-0361566-1567 - Nanometarski elektronički elementi i sklopovske primjene (Suligoj, Tomislav, MZO ) ( CroRIS)
036-0982904-1642 - Sofisticirane poluvodičke strukture za komunikacijsku tehnologiju (Koričić, Marko, MZO ) ( CroRIS)
Ustanove:
Fakultet elektrotehnike i računarstva, Zagreb
