Pregled bibliografske jedinice broj: 46613
Method based on the extended Ramo theorem to interpret charge collection efficiency profiles as determined by lateral IBICC
Method based on the extended Ramo theorem to interpret charge collection efficiency profiles as determined by lateral IBICC // 7th International Conference on Nuclear Microprobe Technology and Applications, Final Program and Abstracts
Bordeaux: ICNMTA 2000, 2000. (poster, nije recenziran, sažetak, znanstveni)
CROSBI ID: 46613 Za ispravke kontaktirajte CROSBI podršku putem web obrasca
Naslov
Method based on the extended Ramo theorem to interpret charge collection efficiency profiles as determined by lateral IBICC
Autori
Vittone, E. ; Fizzotti, F. ; Sanfilippo, C. ; Manfredotti, C. ; Jakšić, Milko
Vrsta, podvrsta i kategorija rada
Sažeci sa skupova, sažetak, znanstveni
Izvornik
7th International Conference on Nuclear Microprobe Technology and Applications, Final Program and Abstracts
/ - Bordeaux : ICNMTA 2000, 2000
Skup
7th International Conference on Nuclear Microprobe Technology and Applications
Mjesto i datum
Bordeaux, Francuska, 10.09.2000. - 15.09.2000
Vrsta sudjelovanja
Poster
Vrsta recenzije
Nije recenziran
Sažetak
An efficient method for calculating charge collection profiles in semiconductor devices as determined by lateral IBICC measurements is presented. The method is based on the extended Shockley-Ramo theorem that providess a rigorous mathematical tool for the calculation of the induced charge under the assumption of a quasi-steady state operation of the semiconductor device.
Izvorni jezik
Engleski
Znanstvena područja
Fizika
POVEZANOST RADA
