Naslov
Hotspot Evaluation of High-voltage MOSFET Drivers

Autori
Ivanković, Andrej

Vrsta, podvrsta i kategorija rada
Ocjenski radovi, diplomski rad, diplomski

Fakultet
Fakultet Elektrotehnike i Računarstva

Mjesto
Zagreb

Datum
01.04

Godina
2010

Stranica
97

Mentor
Barić, Adrijan

Neposredni voditelj
Vanderstraeten, Daniel

Ključne riječi
Reliability; hotspot measurements; temperature measurements; high voltage drivers

Sažetak
This thesis presents a complete hotspot evaluation of the ON Semiconductor 0.35-um high voltage VDMOS transistor. It incorporates elaboration of the die level and package level structure as well as basic information on the transistor technology. The meaning and potential impact of several accelerated tests is described including the insight into the stress equipment functionality. Post test inspection methods and equipment are explored and applied to obtain the desired results. Package level accelerated tests are conducted followed by extensive investigation of the test impact and failure analysis. The obtained electromechanical information is used to reveal and explain observed failure mechanisms and to provide the final assessment of the package level structure and VDMOS transistor.

Izvorni jezik
Engleski

Znanstvena područja
Elektrotehnika

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