Naslov
The influence of implanted impurities on the termally-induced epitaxial recrystallization of CoSi2

Autori
Ridgway, M.C. ; Elliman, R.G. ; Petravić, Mladen ; Thornton, R.P. ; Williams, J.S.

Izvornik
Journal of materials research (0884-2914) 6 (1991), 5; 1035-1039

Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni

Ključne riječi
epitaxial recrystallization; impurities; CoSi2

Sažetak
The influence of implanted impurities (B, O, P, Ar, Xe, Pb, and Bi) on the rate of low-temperature (138-degrees-C), solid-phase epitaxial growth (SPEG) of amorphized CoSi2 has been studied. SPEG rates of impurity-implanted CoSi2, as determined from time-resolved reflectivity measurements, were retarded for all impurities compared to that of Si-implanted CoSi2. The extent of retardation varied from a factor of 1.5 for P to 9.4 for Xe. Channeling measurements of impurity-implanted CoSi2 indicated that Xe and Bi atoms were located on nonsubstitutional lattice sites while approximately 40% of Pb atoms occupied either substitutional sites or vacant interstitial cation sites following annealing. The presence of impurities did not affect the CoSi2 post-anneal crystalline quality, and no significant impurity diffusion was apparent at 138-degrees-C from secondary-ion mass spectrometry measurements.

Izvorni jezik
Engleski

Znanstvena područja
Fizika

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