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Pregled bibliografske jedinice broj: 462056

Precipitation and segregation of Sb at Si-SiO2 interfaces during thermal oxidation

Williams, J.S.; Petravić, Mladen; Li, Y.H.; Davies, J.A.; Palmer, G.
Precipitation and segregation of Sb at Si-SiO2 interfaces during thermal oxidation // Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 64 (1992), 1-4; 156-159 doi:10.1016/0168-583X(92)95457-3 (međunarodna recenzija, članak, znanstveni)

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Naslov
Precipitation and segregation of Sb at Si-SiO2 interfaces during thermal oxidation

Autori
Williams, J.S. ; Petravić, Mladen ; Li, Y.H. ; Davies, J.A. ; Palmer, G.

Izvornik
Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms (0168-583X) 64 (1992), 1-4; 156-159

Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni

Ključne riječi
SIMS ; precipitaton ; segregation ; Sb ; Si-SiO2 ; oxidation

Sažetak
Rutherford backscattering and channeling (RBS) and secondary ion mass spectrometry (SIMS) have been used to study the redistribution and solubility of Sb during the oxidation of ion implanted silicon. At low Sb concentrations in silicon, both RBS and SIMS provide complementary data indicating the segregation of Sb at a moving Si-SiO2 interface and incorporation of Sb in SiO2 up to the measured equilibrium solubility limit (approximately 0.025 at.% at 800-degrees-C). In this regime the oxidation rate is substantially enhanced. At high Sb concentrations, the oxidation rate returns to that of undoped silicon. The Sb is found to precipitate ahead of the advancing Si- SiO2 interface with very little Sb segregated at this interface. In this regime, the SIMS profiles of Sb depart substantially from those measured by RBS and this behavior is interpreted, in part, to charging effects during sputtering and the precipitation of Sb.

Izvorni jezik
Engleski

Znanstvena područja
Fizika



POVEZANOST RADA

Profili:

Avatar Url Mladen Petravić (autor)

Poveznice na cjeloviti tekst rada:

doi www.sciencedirect.com

Citiraj ovu publikaciju:

Williams, J.S.; Petravić, Mladen; Li, Y.H.; Davies, J.A.; Palmer, G.
Precipitation and segregation of Sb at Si-SiO2 interfaces during thermal oxidation // Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 64 (1992), 1-4; 156-159 doi:10.1016/0168-583X(92)95457-3 (međunarodna recenzija, članak, znanstveni)
Williams, J., Petravić, M., Li, Y., Davies, J. & Palmer, G. (1992) Precipitation and segregation of Sb at Si-SiO2 interfaces during thermal oxidation. Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 64 (1-4), 156-159 doi:10.1016/0168-583X(92)95457-3.
@article{article, author = {Williams, J.S. and Petravi\'{c}, Mladen and Li, Y.H. and Davies, J.A. and Palmer, G.}, year = {1992}, pages = {156-159}, DOI = {10.1016/0168-583X(92)95457-3}, keywords = {SIMS, precipitaton, segregation, Sb, Si-SiO2, oxidation}, journal = {Nuclear instruments and methods in physics research. Section B, Beam interactions with materials and atoms}, doi = {10.1016/0168-583X(92)95457-3}, volume = {64}, number = {1-4}, issn = {0168-583X}, title = {Precipitation and segregation of Sb at Si-SiO2 interfaces during thermal oxidation}, keyword = {SIMS, precipitaton, segregation, Sb, Si-SiO2, oxidation} }
@article{article, author = {Williams, J.S. and Petravi\'{c}, Mladen and Li, Y.H. and Davies, J.A. and Palmer, G.}, year = {1992}, pages = {156-159}, DOI = {10.1016/0168-583X(92)95457-3}, keywords = {SIMS, precipitaton, segregation, Sb, Si-SiO2, oxidation}, journal = {Nuclear instruments and methods in physics research. Section B, Beam interactions with materials and atoms}, doi = {10.1016/0168-583X(92)95457-3}, volume = {64}, number = {1-4}, issn = {0168-583X}, title = {Precipitation and segregation of Sb at Si-SiO2 interfaces during thermal oxidation}, keyword = {SIMS, precipitaton, segregation, Sb, Si-SiO2, oxidation} }

Časopis indeksira:


  • Web of Science Core Collection (WoSCC)
    • Science Citation Index Expanded (SCI-EXP)
    • SCI-EXP, SSCI i/ili A&HCI

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