Naslov
Characterization of III-V Multilayers Grown by Low-Pressure Metal Organic Vapour phase Epitaxy

Autori
Jagadish, C. ; Clark, A. ; Li, G. ; Larsen, C.A. ; Hauser, N. ; Petravić, Mladen ; Thompson, T.D. ; Halstead, T. ; Williams, J.S.

Izvornik
Australian journal of physics (0004-9506) 46 (1993); 435-445

Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni

Ključne riječi
GaAs; Trimethilgallium; As; Si

Sažetak
Undoped and doped layers of gallium arsenide and aluminium gallium arsenide have be, grown on gallium arsenide by low- pressure metal organic vapour-phase epitaxy (MOVPE). Delta doping and growth on silicon substrates have also been attempted. Of particular interest in the present study has been the influence of growth parameters, such as growth temperature, group III mole fraction and dopant flow, on the electrical and physical properties of gallium arsenide layers. An increase in growth temperature leads to increased doping efficiency in the case of silicon, whereas the opposite is true in the case of zinc. Deep level transient spectroscopy (DTLS) studies on undoped GaAs layers showed two levels, the expected EL2 level and a carbon-related level. The determination of optimum growth conditions has allowed good quality GaAs and AlGaAs epitaxial layers to be produced for a range of applications.

Izvorni jezik
Engleski

Znanstvena područja
Fizika

POVEZANOST RADA