Pregled bibliografske jedinice broj: 461875
Design Considerations for Integration of Horizontal Current Bipolar Transistor (HCBT) with 0.18 μm Bulk CMOS Technology
Design Considerations for Integration of Horizontal Current Bipolar Transistor (HCBT) with 0.18 μm Bulk CMOS Technology // Proceedings of the International Semiconductor Device Research Symposium 2009 / Jones, Ken ; Dilli, Zeynep (ur.).
College Park (MD): Institute of Electrical and Electronics Engineers (IEEE), 2009. str. 1-2 (predavanje, međunarodna recenzija, sažetak, znanstveni)
CROSBI ID: 461875 Za ispravke kontaktirajte CROSBI podršku putem web obrasca
Naslov
Design Considerations for Integration of Horizontal Current Bipolar Transistor (HCBT) with 0.18 μm Bulk CMOS Technology
Autori
Koričić, Marko ; Suligoj, Tomislav ; Mochizuki, H. ; Morita, S. ; Shinomura, K. ; Imai, H.
Vrsta, podvrsta i kategorija rada
Sažeci sa skupova, sažetak, znanstveni
Izvornik
Proceedings of the International Semiconductor Device Research Symposium 2009
/ Jones, Ken ; Dilli, Zeynep - College Park (MD) : Institute of Electrical and Electronics Engineers (IEEE), 2009, 1-2
ISBN
978-1-4244-6031-1
Skup
International Semiconductor Device Research Symposium 2009
Mjesto i datum
College Park (MD), Sjedinjene Američke Države, 09.12.2009. - 11.12.2009
Vrsta sudjelovanja
Predavanje
Vrsta recenzije
Međunarodna recenzija
Ključne riječi
Horizontal Current Bipolar Transistor (HCBT); 0.18 μm CMOS; low-cost BiCMOS
Sažetak
Horizontal Current Bipolar Transistor (HCBT) is the only bulk-silicon lateral bipolar transistor with state-of-the-art electrical performance published so far. Integration of the HCBT with a commercial 0.18 μm CMOS process has been demonstrated and yields a very low-cost BiCMOS technology platform suitable for wireless applications. For the optimum HCBT performance, a good separation between extrinsic base and emitter is needed. The extrinsic base has to be highly doped with a limited junction depth, whereas the emitter polysilicon thickness has to be around 90 nm.
Izvorni jezik
Engleski
Znanstvena područja
Elektrotehnika
POVEZANOST RADA
Projekti:
036-0361566-1567 - Nanometarski elektronički elementi i sklopovske primjene (Suligoj, Tomislav, MZO ) ( CroRIS)
036-0982904-1642 - Sofisticirane poluvodičke strukture za komunikacijsku tehnologiju (Koričić, Marko, MZO ) ( CroRIS)
Ustanove:
Fakultet elektrotehnike i računarstva, Zagreb
