Pregled bibliografske jedinice broj: 461872
MeV implantation into semiconductors
MeV implantation into semiconductors // Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 80-81 (1993), 1; 507-513 doi:10.1016/0168-583X(93)96170-H (međunarodna recenzija, članak, znanstveni)
CROSBI ID: 461872 Za ispravke kontaktirajte CROSBI podršku putem web obrasca
Naslov
MeV implantation into semiconductors
Autori
Williams, J.S. ; Elliman, R.G. ; Ridgway, M.C. ; Jagadish, C. ; Ellingboe, S.L. ; Goldberg, R. ; Petravić, Mladen ; Wong, W.C. ; Dezhang, Z ; Nygren, E. ; Svensson, B.G.
Izvornik
Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms (0168-583X) 80-81
(1993), 1;
507-513
Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni
Ključne riječi
MeV ion implantation ; Si ; GaAs/AlGaAs
Sažetak
This paper reviews recent MeV implantation applications into semiconductors carried out at Rhe Australian National University. Studies of damage, amorphization and dynamic defect annealing in silicon and GaAs/AiGaAs muttilayer structures are emphasized, but selected examples of stopping measurements, diffusion, buried compound and alloy formation, electrical isolation and doping are also briefly treated . The particular advantages for solid state studies of controlling the nuclear energy deposition density distribution, and hence defect production, over large depths, are illustrated with appropriate examples.
Izvorni jezik
Engleski
Znanstvena područja
Fizika
Citiraj ovu publikaciju:
Časopis indeksira:
- Web of Science Core Collection (WoSCC)
- Science Citation Index Expanded (SCI-EXP)
- Social Science Citation Index (SSCI)
- SCI-EXP, SSCI i/ili A&HCI
