Naslov
Semiconductor Device and Method for Manufacturing Semiconductor Device

Autori
Koričić, Marko ; Suligoj, Tomislav ; Mochizuki, H. ; Morita, S.

Broj patenta
WO/2009/081867

Nositelj prava
Patent Corporation Treaty, World Intellectual Property Organization, Zagreb, Hrvatska

Sažetak
Provided are the constitution of a lateral transistor suited for hybridization (BiCMOS) of a high-performance lateral transistor (HCBT) and a CMOS transistor and its manufacturing method. A semiconductor device comproses a hybrid of an HCBT and a CMOS transistor. The HCBT has an open region opened by etching an element isolating oxide film surrounding an n-hill layer, an emitter electrode and a collector electrode each of which is formed in the open region and is composed of a polysilicon film having a thickness leading to exposing the n-hill layer exposed by the etching of the element isolating oxide film, and an ultrathin oxide film covering at least a part of the n-hill layer. The ultrathin film functions as a protective film for protecting the n-hill layer from being etched when the polysilicon film is etched to form the emitter electrode and the collector electrode.

Izvorni jezik
Engleski

Znanstvena područja
Elektrotehnika

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