Naslov
Barrier and semiconducting properties of thin anodic films on Cr in an acid solution

Autori
Petrović, Željka ; Lajci, Nushe ; Metikoš-Huković, Mirjana ; Babić, Ranko

Izvornik
Journal of solid state electrochemistry (1432-8488) 15 (2011), 6; 1201-1207

Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni

Ključne riječi
chromium-quartz crystal electrode; chromium hydrated oxide; low-field mechanism; n-type semiconductor; diffusion coefficient of anion vacancies

Sažetak
The study of barrier and semiconducting properties of anodically formed oxide films on chromium in an acid solution was carried out using the Cr-quartz crystal electrode. The oxide film formation and growth occur through an anion vacancies transport via a low-field assisted mechanism (H = 10^6 V cm^(-1)). The anion diffusion coefficient, which quantitatively describes the transport of point defects within the growing film, was calculated using the Cottrell equation and from capacitance data using the Nernst-Planck for low-field limit approximation and Mott-Schottky analysis. The depletion region in the passive film, close to the filmelectrolyte interface, dominates the semiconducting properties. The passive film on Cr in an acid solution behaves as an n-type semiconductor. An energy-band structure model of the passive film is given.

Izvorni jezik
Engleski

Znanstvena područja
Kemija

POVEZANOST RADA