Pregled bibliografske jedinice broj: 450713
Orientation-Dependent Electron Mobility Behavior with Downscaling of Fin-Width in Double- and Triple-Gate SOI FinFETs
Orientation-Dependent Electron Mobility Behavior with Downscaling of Fin-Width in Double- and Triple-Gate SOI FinFETs // Proceedings of the 11th International Conference on Ultimate Integration on Silicon / S. Roy (ur.).
Glasgow, 2010. str. 21-24 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni)
CROSBI ID: 450713 Za ispravke kontaktirajte CROSBI podršku putem web obrasca
Naslov
Orientation-Dependent Electron Mobility Behavior with Downscaling of Fin-Width in Double- and Triple-Gate SOI FinFETs
Autori
Poljak, Mirko ; Jovanović, Vladimir ; Suligoj, Tomislav
Vrsta, podvrsta i kategorija rada
Radovi u zbornicima skupova, cjeloviti rad (in extenso), znanstveni
Izvornik
Proceedings of the 11th International Conference on Ultimate Integration on Silicon
/ S. Roy - Glasgow, 2010, 21-24
Skup
International Conference on Ultimate Integration on Silicon - ULIS 2010
Mjesto i datum
Glasgow, Ujedinjeno Kraljevstvo, 18.03.2010. - 19.03.2010
Vrsta sudjelovanja
Predavanje
Vrsta recenzije
Međunarodna recenzija
Ključne riječi
electron mobility; quantum confinement; quantum modeling; FinFET; double-gate; triple-gate
Sažetak
Behavior of electron mobility with downscaling of fin width in double- and triple-gate SOI FinFETs is analyzed by self-consistent numerical calculations. Double-gate FinFETs with (100), (110) and (111) active surfaces, and triple-gate FinFETs on (100) wafers with [100] or [110] sidewalls, and on (110) wafers with [111] sidewalls, are compared.
Izvorni jezik
Engleski
Znanstvena područja
Elektrotehnika
POVEZANOST RADA
Projekti:
036-0361566-1567 - Nanometarski elektronički elementi i sklopovske primjene (Suligoj, Tomislav, MZO ) ( CroRIS)
036-0982904-1642 - Sofisticirane poluvodičke strukture za komunikacijsku tehnologiju (Koričić, Marko, MZO ) ( CroRIS)
Ustanove:
Fakultet elektrotehnike i računarstva, Zagreb
