Pregled bibliografske jedinice broj: 449371
Defect acceptor and donor in ion-bombarded GaN
Defect acceptor and donor in ion-bombarded GaN // Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 23 (2005), 5; 1340-1345 (međunarodna recenzija, članak, znanstveni)
CROSBI ID: 449371 Za ispravke kontaktirajte CROSBI podršku putem web obrasca
Naslov
Defect acceptor and donor in ion-bombarded GaN
Autori
Petravić, Mladen ; Coleman, Victoria ; Kim, Ki-Jeong ; Kim, Bongsoo ; Li, Gang
Izvornik
Journal of vacuum science & technology. A. Vacuum, surfaces, and films (0734-2101) 23
(2005), 5;
1340-1345
Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni
Ključne riječi
GaN; NEXAFS
Sažetak
We have employed synchrotron-based core level photoemission measurements and near-edge x-ray absorption fine structure spectroscopy to identify and characterize nitrogen interstitials in p-type GaN, created by nitrogen bombardment. From absorption measurements around the nitrogen K edge we have identified nitrogen interstitial levels within the band gap, in good agreement with theoretical predictions. The reduction in band bending determined from photoemission measurements was explained by the acceptor-like character of these defects. Argon bombardment produces nitrogen vacancies and the metallic Ga phase at the surface, which will produce the increased band bending and pinning of the surface Fermi level closer to the conduction band minimum.
Izvorni jezik
Engleski
Znanstvena područja
Fizika
Citiraj ovu publikaciju:
Časopis indeksira:
- Current Contents Connect (CCC)
- Web of Science Core Collection (WoSCC)
- Science Citation Index Expanded (SCI-EXP)
- SCI-EXP, SSCI i/ili A&HCI
- Scopus
